*Japanese*

Faculty Member

photo

Institute of Materials and Systems for Sustainability, Center for Integrated Reserch of Future Electronics

KATO, Masashi, Visiting Associate Professor, 1975

E-Mail Address

kato.masashi*@*nitech.ac.jp(Please drop *'s before/after @ in sending e-mail.)

Private Web Site

http://ik-lab.web.nitech.ac.jp/mkato/

Academic Background

Work Experience

Academic Degree

Doctor of Engineering, Nagoya Institute of Technology, Coursework, 2003/3

Keywords of Research themes

Semiconductor characterization, Power device, Artificial photosynthesis, Integrated circuit

Research field

Semiconductor engineering

Original Papers

  1. “The enhanced performance of 3C-SiC photocathodes for the generation of hydrogen through the use of cocatalysts” Naoto Ichikawa, Masashi Kato, and Masaya Ichimura, Applied Physics Letters 109, 153904 (2016); doi: 10.1063/1.4964825
  2. “Degradation of a sintered Cu nanoparticle layer studied by synchrotron radiation computed laminography” Masanori Usui, Hidehiko Kimura, Toshikazu Satoh, Takashi Asada, Satoshi Yamaguchi, Masashi Kato, Microelectronics Reliability 63, 152–158 (2016). http://dx.doi.org/10.1016/j.microrel.2016.06.011
  3. “Improved performance of InGaN/GaN multilayer solar cells with an atomic-layer-deposited Al2O3 passivation film” M. Miyoshi, T. Kabata, T. Tsutsumi, T. Mori, M. Kato, T. Egawa, Electronics Letters 52, 1246–1248 (2016). http://dx.doi.org/10.1049/el.2016.1574
  4. “Development of a microwave photoconductance measurement technique for study of carrier dynamics in highly-excited 4H-SiC” Subacius Liudvikas, Jarasiunas Kestutis, Ščajev Patrik, Kato Masashi, Measurement Science and Technology 26 (2015) 125014. http://dx.doi.org/10.1088/0957-0233/26/12/125014
  5. “Carrier lifetime measurements on various crystal faces of rutile TiO2 single crystals” Masashi Kato, Kimihiro Kohama, Yoshihito Ichikawa, and Masaya Ichimura, Materials Letters 160 (2015) 397–399 http://dx.doi.org/10.1016/j.matlet.2015.08.018
  6. “Spectral response, carrier lifetime, and photocurrents of SiC photocathodes” Masashi Kato, Keiko Miyake, Tomonari Yasuda, Masaya Ichimura, Tomoaki Hatayama, and Takeshi Ohshima, Japanese Journal of Applied Physics 55, 01AC02 (2016). http://dx.doi.org/10.7567/JJAP.55.01AC02
  7. “Photocathode for hydrogen generation using 3C-SiC epilayer grown on vicinal off-angle 4H-SiC substrate” Naoto Ichikawa, Masashi Kato, and Masaya Ichimura, Applied Physics Express 8, 091301 (2015). http://dx.doi.org/10.7567/APEX.8.091301
  8. “Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron – hole scattering” Masashi Kato, Yuto Mori, and Masaya Ichimura, Japanese Journal of Applied Physics 54, 04DP14 (2015) http://dx.doi.org/10.7567/JJAP.54.04DP14
  9. “Howling Reduction by Analog Phase-Locked Loop and Active Noise Control Circuits” Manami Kubo, Junki Taniguchi, Masashi Kato, Applied Acoustics 87C (2015) pp. 174-182.
  10. "Surface recombination velocities for n-type 4H-SiC treated by various processes" Yuto Mori, Masashi Kato, Masaya Ichimura, Journal of Physics D: Applied Physics 47 (2014) 335102 (5pp) http://dx.doi.org/10.1088/0022-3727/47/33/335102
  11. “Epitaxial p-type SiC as a self-driven photocathode for water splitting” Masashi Kato, Tomonari Yasuda, Keiko Miyake, Masaya Ichimura, Tomoaki Hatayama, International Journal of Hydrogen Energy 39 (2014) 4845-4849 http://dx.doi.org/10.1016/j.ijhydene.2014.01.049
  12. “Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation” Masashi Kato, Kazuki Yoshihara, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima, Japanese Journal of Applied Physics 53 (2014) 04EP09.
  13. “Efficiency of a solar cell with intermediate energy levels: an example study on hydrogen implanted Si solar cells” Masaya Ichimura, Hiromu Sakakibara, Koji Wada and Masashi Kato, Journal of Applied Physics, 114, 114505 (2013).
  14. “Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate”, Masashi Kato, Atsushi Yoshida, Masaya Ichimura, Hiroyuki Nagasawa, Physica Status Solidi (a) Vol. 210 (2013) No. 9 pp.1719-1725
  15. “Performance improvement of the analog ANC circuit for a duct by insertion of an all-pass filter” T. Hyodo, G. Asakura, K. Tsukada, and M. Kato, IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Vol.E96-A No.4 (2013) pp.824-825
  16. “Leakage Current Suppression Using Passivation of Defect by Anodic Oxidation for 4H-SiC Schottky Contacts” Masashi Kato, Masaya Kimura, and Masaya Ichimura, Japanese Journal of Applied Physics, 52 (2013) 04CP02.
  17. "SiC photoelectrodes for a self-driven water-splitting cell" T. Yasuda, M. Kato, M. Ichimura, T. Hatayama, Applied Physics Letters, 101, pp.053902-1-3 (2012)
  18. “Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation” Masashi Kato, Yoshinori Matsushita, Masaya Ichimura, Tomoaki Hatayama, and Takeshi Ohshima, Japanese Journal of Applied Physics, Vol. 51 (2012) 028006-1-2
  19. “Estimation of the Surface Recombination Velocity from Thickness Dependence of the Carrier Lifetime in n-type 4H-SiC Epilayers” Masashi Kato, Atsushi Yoshida, Masaya Ichimura, Japanese Journal of Applied Physics, Vol. 51 (2012) 02BP12-1-6
  20. “A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H- and 6H-SiC crystals” Patrik Scajev, Masashi Kato, and Kestutis Jarasiunas, J. Phys. D: Appl. Phys. 44 (2011) 365402-1-8
  21. “Active Noise Control in a Duct by an Analog Neural Network Circuit” Masashi Kato, Applied Acoustics, Vol.72 No.10 pp.732-736 (2011)
  22. “Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky ContactsUsing Electrochemical Deposition of ZnO” Masashi Kato, Hidenori Ono, Masaya Ichimura, Gan Feng, and Tsunenobu Kimoto, Japanese Journal of Applied Physics Vol. 50, No. 3, 036603-1-4 (2011).
  23. “Comparative studies of carrier dynamics in 3C-SiC layers grown on Si and 4H-SiC substrates”P. Ščajev, J. Hassan, K. Jarašiūnas, M. Kato, A. Henry, and J. P. Bergman, Journal of Electronic Materials, Vol. 40 No. 4 (2011) 394-399. 28. "Deep Levels Affecting the Resistivity in Semi-Insulating 6H-SiC" M. Kato, K. Kito and M. Ichimura, Journal of Applied Physics, 108, 053718-1-5 (2010)
  24. “Excess carrier recombination lifetime of bulk n-type 3C-SiC” Vytautas Grivickas, Georgios Manolis, Karolis Gulbinas, Kestutis Jarašiūnas, and Masashi Kato, APPLIED PHYSICS LETTERS 95, p.242110-1-3, 2009
  25. “Annealing Study of the electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application” Ashraf M. Abdel HALEEM, Masashi KATO and Masaya ICHIMURA, IEICE TRANS. ELECTRON., Vol. E92-C, No.12, pp. 1464-1469, Dec. 2009.
  26. “Characterization of plasma etching damage on p-type GaN using Schottky diodes” Masashi Kato, Kazuki Mikamo, Masaya Ichimura, Masakazu Kanechika ,Osamu Ishiguro, Tetsu Kachi, Journal of Applied Physics, Vol. 103 (2008 May) 093701-1-5
  27. “Low-Power Switched Current Memory Cell with CMOS-type Configuration” Masashi KATO, Nobuyuki TERADA, Hirofumi OHATA, and Eisuke ARAI, IEICE TRANS. ELECTRON., Vol. E91-C, No.1, pp. 120-121, Jan. 2008.
  28. “Observation of Inhomogeneity of Schottky Barrier Height on 4H-SiC Using the Electrochemical Deposition” Masashi Kato, Kazuya Ogawa and Masaya Ichimura, Japanese Journal of Applied Physics 46 (2007) pp. L997–L999.
  29. “Excess Carrier Lifetime in a Bulk p-type 4H-SiC Wafer Measured by the Microwave Photoconductivity Decay Method” Masashi Kato, Masahiko Kawai, Tatsuhiro Mori, Masaya Ichimura, Shingo Sumie, and Hidehisa Hashizume, Japanese Journal of Applied Physics, 46(2007) pp. 5057-5061.
  30. “Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method” Hideki Watanabe, Masashi Kato, Masaya Ichimura, Eisuke Arai, Masakazu Kanechika, Osamu Ishiguro and Tetsu Kachi, Japanese Journal of Applied Physics, 46(2007) pp. 35-39.
  31. “Optical cross sections of deep levels in 4H-SiC” M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura, T. Kimoto and R. Pässler, Journal of Applied Physics 100, (2006) 053708-1-9.
  32. “Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution” Tatsuhiro Mori, Masashi Kato, Hideki Watanabe, Masaya Ichimura, Eisuke Arai, Shingo Sumie and Hidehisa Hashizume, Japanese Journal of Applied Physics, 44(2005) pp. 8333-8339.
  33. “Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy”Y. Nakakura, M. Kato, M. Ichimura, E. Arai, Y. Tokuda, and S. Nishino, Journal of Applied Physics, 94(2003) pp. 3233-3238.
  34. “Electrochemical etching of 6H-SiC using aqueous KOH solutions with low surface roughness”Masashi Kato, Masaya Ichimura, Eisuke Arai and Perumalsamy Ramasamy,Japanese Journal of Applied Physics, 42(2003) pp. 4233-4236.
  35. “Etch pit observation for 6H-SiC by electrochemical etching using an aqueous KOH solution”Masashi Kato, Masaya Ichimura, Eisuke Arai and Perumalsamy Ramasamy, Journal of Electrochemical Society, 150(2003) pp. C208-211.
  36. “Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression”Masashi Kato, Fumitaka Sobue, Masaya Ichimura, Eisuke Arai, Noboru Yamada, Yutaka Tokuda and Tsugunori Okumura,Solid-State Electronics, 46(2002) pp. 2099-2104.
  37. “Sacrificial Anodic Oxidation of 6H-SiC”Masashi Kato, Masaya Ichimura and Eisuke Arai, Japanese Journal of Applied Physics, 40(2001) pp. L1145-L1147.
  38. “Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane”Masashi Kato, Masaya Ichimura, Eisuke Arai, Yasuichi Masuda, Yi Chen, Shigehiro Nishino and Yutaka Tokuda,Japanese Journal of Applied Physics, 40(2001)pp. 4943-4947.
  39. “Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment”Masashi Kato, Fumitaka Sobue, Masaya Ichimura, Eisuke Arai, Noboru Yamada, Yutaka Tokuda and Tsugunori Okumura, Japanese Journal of Applied Physics, 40(2001) pp. 2983-2986.
  40. “Search for midgap levels in 3C-SiC grown on Si substrates”Noboru Yamada, Masashi Kato, Masaya Ichimura, Eisuke Arai and Yutaka Tokuda,Japanese Journal of Applied Physics, 38(1999) pp. L1094-L1096.
  41. ”Identification of structures of the deep levels in 4H-SiC” Hiroki Nakane, Masashi Kato, Masaya Ichimura, Takeshi Ohshima, Materials Science Forum 778-780 (2014) pp.277-280
  42. ”Impact of carrier lifetime on efficiency of photolytic hydrogen generation by p-type SiC” Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima, Materials Science Forum 778-780 (2014) pp.503-506
  43. ”Estimation of surface recombination velocities for n-type 4H-SiC surfaces treated by various processes” Yuto Mori, Masashi Kato, Masaya Ichimura, Materials Science Forum 778-780 (2014) pp.432-435
  44. ”Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC” Masashi Kato, Yuto Mori, Masaya Ichimura, Materials Science Forum 778-780 (2014) pp.293-296
  45. “Deep levels in p-type 4H-SiC induced by low-energy electron irradiation” Kazuki YOSHIHARA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OHSHIMA, Materials Science Forum Vols. 740-742 (2013) pp. 373-376.
  46. “Solar-to-hydrogen conversion efficiency of water photolysis with epitaxially grown p-type SiC” Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Materials Science Forum Vols. 740-742 (2013) pp. 859-862.
  47. “Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material” Tomonari Yasuda, Masashi Kato and Masaya Ichimura, Materials Science Forum Vols. 717-720 (2012) pp.585-588.
  48. ”Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes” K. Jarašiūnas, P. Ščajev, T. Malinauskas, M. Kato, E. Ivakin, M. Nesladek, K. Haenen, Ü. Özgür, and H. Morkoç, Materials Science Forum Vols. 717-720 (2012) pp.309-312.
  49. ”Correlation between strain and excess carrier lifetime in a 3C-SiC wafer” Atsushi Yoshida, Masashi Kato, Masaya Ichimura, Materials Science Forum Vols. 717-720 (2012) pp.305-308.
  50. “On applicability of time-resolved optical techniques for characterization of differently grown 3C-SiC crystals and heterostructures” P. Ščajev, P. Onufrijevs, G. Manolis, M. Karaliūnas, S. Nargelas, N. Jegenyes, J. Lorenzzi, G. Ferro, M. Beshkova, R. Vasiliauskas, M. Syväjärvi, R. Yakimova, M. Kato, and K. Jarašiūnas, Materials Science Forum Vol. 711 (2012) pp 159-163
  51. ”Electrical parameters of bulk 3C-SiC crystals determined by Hall effect, magnetoresistivity, and contactless time-resolved optical techniques” P. Ščajev, A. Mekys, P. Malinovskis, J. Storasta, M. Kato, and K. Jarašiūnas, Materials Science Forum Vols. 679-680 (2011) pp 157-160
  52. ”Improvement of Schottky contact characteristics by anodic oxidation of 4H-SiC” Masaya Kimura, Masashi Kato and Masaya Ichimura, Materials Science Forum Vols. 679-680 (2011) pp 461-464
  53. ”Internal Stresses in Free-Standing 3C-SiC Grown on Si and Their Relation to Carrier Lifetime” V. Grivickas, G. Manolis, K. Gulbinas, J. Linnros, M. Kato, AIP Conf. Proc. -- November 1, 2010 -- Volume 1292, pp. 91-94
  54. ”Correlation between Schottky contact characteristics and regions with a low barrier height revealed by the electrochemical deposition on 4H-SiC” M. Kato, H. Ono and M. Ichimura, Materials Science Forum Vols. 645-648 (2010) pp 669-672
  55. ”Nonequilibrium carrier recombination in highly excited bulk SiC crystals” K. Jarašiūnas, P. Ščajev, V. Gudelis, P. B. Klein, and M. Kato, Materials Science Forum Vols. 645-648 (2010) pp 215-218
  56. ”Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method” Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA and Takeshi OHSHIMA, Materials Science Forum Vols. 645-648 (2010) pp 207-210
  57. “Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy” Masashi Kato, Kosuke Kito and Masaya Ichimura, Materials Science Forum Vols. 615-617 (2009) pp 381-384
  58. “Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition” Masashi Kato, Kazuya Ogawa and Masaya Ichimura, Materials Science Forum Vols. 600-603 (2009) pp 373-376
  59. “Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition” Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura, Technical Digest of 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2008 Jul.) pp.357-361.
  60. “Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes” Masashi KATO,Kazuki MIKAMO,Masaya ICHIMURA,Masakazu KANECHIKA,Osamu ISHIGURO and Tetsu KACHI, Technical Digest of 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2007 Jun.) J-R21M pp.118-121.
  61. “Analysis of plasma etching damages in GaN by excess carrier lifetime measurements” Masashi KATO, Keisuke FUKUSHIMA, Masaya ICHIMURA, Masakazu KANECHIKA, Osamu ISHIGURO and Tetsu KACHI, Technical Digest of 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2007 Jun.) J-R20M pp.114-117.
  62. “Excess Carrier Lifetimes in a bulk p-type SiC Wafer Measured by the Microwave Photoconductivity Decay Method” Masahiko Kawai, Tatsuhiro Mori, Masashi Kato, Masaya Ichimura, Shingo Sumie, and Hidehisa Hashizume, Materials Science Forum, 556-557(2007) pp. 359-362.
  63. “Excess Carrier Lifetime Measurements for GaN onSapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method”Masashi Kato, Hideki Watanabe, Masaya Ichimura, and Eisuke Arai, Proceedings of Materials Research Society, Volume 831(2005) pp. E3.3 107-111.
  64. “Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition”M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura and T. Kimoto, Materials Science Forum, 483-485(2005) pp. 381-384
  65. “Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution”M. Kato, M. Ichimura, E. Arai, S. Sumie and H. Hashizume, Materials Science Forum, 457-460(2004) pp. 505-508
  66. “Electrochemical etching of n-type 6H-SiC using aqueous KOH solutions”Masashi Kato, Masaya Ichimura, Eisuke Arai and Perumalsamy Ramasamy, Materials Science Forum, 433-436(2003) pp. 665-668.
  67. “Characterization of deep levels in 3C-SiC by optical-capacitance-transient spectroscopy”Yohei Nakakura, Masashi Kato, Masaya Ichimura, Eisuke Arai and Yutaka Tokuda,Proceedings of Materials Research Society, Volume 719(2002) pp. 167-172.
  68. “Deep level study in epitaxial 4H-SiC grown on substrates inclined toward <1100>”Masashi Kato, Masaya Ichimura, Eisuke Arai and Shigehiro Nishino, Proceedings of Materials Research Society, Volume 719(2002) pp. 457-462.
  69. “Characteristics of Schottky diodes on 6H-SiC surfaces after sacrificial anodic oxidation”Masashi Kato, Masaya Ichimura and Eisuke Arai, Materials Science Forum, 389-393(2002) pp. 933-936.
  70. “DLTS study of 3C-SiC grown on Si using hexamethyldisilane”Masashi Kato, Masaya Ichimura, Eisuke Arai, Yasuichi Masuda, Yi Chen, Shigehiro Nishino and Yutaka Tokuda,Proceedings of Materials Research Society, Vol. 622(2000) pp. T-4.3.1-6.
  71. “Electrochemical oxidation and etching of 6H-SiC” [invited]Masashi Kato, Masaya Ichimura and Eisuke Arai, Recent Research Development in Electrochemistry, 7(2004) pp. 45-70
  72. “Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods” [invited]Masashi Kato, Masaya Ichimura, Eisuke Arai and Yutaka Tokuda,Defect and Diffusion Forum, 218-220(2003) pp. 1-16.

Presentations

  1. SPIE Optics + Photonics2016, Optical Engineering + Applications Conferences, Wide Bandgap Power Devices and Applications , 28 August 2016“Evaluation of surface recombination of SiC for development of bipolar devices”(invited talk),Masashi Kato
  2. UK-Japan Solar Driven Fuel Synthesis Workshop: Materials, Understanding and Reactor Design, September 18-19, 2014, British Embassy Tokyo, P-11: SILICON CARBIDE PHOTOCATHODE FOR SOLAR TO HYDROGEN CONVERSION(invited poster), Masashi Kato
  3. ASIA-PACIFIC WORKSHOP ON MATERIALS CHARACTERISATION, 24 September 2011, Crystal Growth Centre, Anna Univesity, Chennai, India, “Characterization of deep levels in semi-insulating SiC”(invited talk), Masashi Kato
  4. Joint Workshop on Nitride Semiconductors and Devices (JWNSD 2010), 18 Oct. 2010, Grand Copthorne Water Front Singapore, “Characterization of plasma etching damage in GaN by electrical methods”(invited talk),Masashi Katoand Masaya Ichimura
  5. 14thNational Seminar on Crystal Growth, 10-12 March 2010, School of Advanced Sciences, VIT University, Vellore -632 014, Tamil Nadu, India, “Observation of crystal defects lowering the Schottky barrier in 4H-SiCby the electrochemical deposition”(invited talk),Masashi Kato
  6. The 11-th International Conference-School,ADVANCED MATERIALS AND TECHNOLOGIES,August 27-31, 2009, Palanga, Lithuania, “Characterization of deep level and carrier lifetime in silicon carbide”(invited talk),Masashi Kato
  7. National Conference cum Workshop on Materials Science and Technology (2-4 December 2007) Bangladesh University of Engineering & Technology, Dhaka, Bangladesh, “Characterization of Deep Levels in 4H-SiC by Capacitance Transient Methods” (invited talk),Masashi Kato and Masaya Ichimura
  8. 11thNational Seminar on Crystal Growth(with international participation), 07-09 December 2006, Centre for Crystal Growth, SSN College of Engineering, Old Mahabalipuram Road, SSN Nagar, Kalavakkam-603110, Tamil Nadu, INDIA,“Electrical and Structural Characterization of Silicon Carbide Wafers”(invited talk),Masashi Kato, Masaya Ichimura

Honors, Awards, and Prizes