*Japanese*

Faculty Member

photo

Institute of Materials and Systems for Sustainability Center for Integrated Reserch of Future Electronics

PRISTOVSEK, Markus, Designated Professor

Work Experience

Academic Degree

Research Papers

Book chapter and thesis

  1. In-situ monitoring towards monolayer precision for III-V semiconductor growth
    M. Pristovsek
    Habilitation, Technische Universität Berlin (2012)
  2. Semiconductor Nanostructures
    M. Pristovsek, W. Richter
    (Springer, Berlin-Heidelberg-New York, 2008) Chapter 3, 67–86
  3. Fundamental Growth Processes on Different Gallium Arsenide Surfaces in Metal-Organic Vapor Phase Epitaxy
    M. Pristovsek
    Ph.D. thesis, Technische Universität Berlin (2000)

    Publications (w/o proceedings)

  4. What limits the efficiency of long wavelength (0001) InGaN based light emitting diodes? M. Pristovsek, A. Bao, R. A. Oliver, T. Badcock, M. Ali, A. Shields
    ACS Photonics (submitted)
  5. Surface transitions of (0001) AlN during metal-organic vapour phase epitaxy M. Pristovsek, K. Bellman, F. Mehnke, J. Stellmach, T. Wernicke, M. Kneissl
    pss (b). (submitted)
  6. Radiative recombination mechanisms in polar and non-polar InGaN/GaN quantum well LED structures
    T. J. Badcock, M. Ali, T. Zhu, M. Pristovsek, R. A. Oliver, A. J. Shields
    Appl. Phys. Lett. 109 (2016) 151110
  7. Determination of axial and lateral exciton diffusion length in GaN by cathodoluminescence
    M. Hocker, P. Maier, L. Jerg, I. Tischer, G. Neusser, C. Kranz, M. Pristovsek, C. J. Humphreys, R. A. R. Leute, D. Heinz, O. Rettig, F. Scholz, K. Thonke
    J. Appl. Phys. 120 (2016) 085703
  8. Deoxidation of (001) III-V semiconductors in metal-organic vapour phase epitaxy
    Ch. Kaspari, M. Pristovsek, W. Richter†
    J. Appl. Phys. 120 (2016) 085701
  9. The impact of the surface on step-bunching and diffusion of Ga on GaAs (001) in metal-organic vapor phase epitaxy
    M. Pristovsek, F. Poser, W. Richter†
    Mat. Res. Express 3 (2016) 075902
  10. Structural and optical properties of (11-22) InGaN quantum wells compared to (0001) and (11-20)
    M. Pristovsek, Y. Han, T. Zhu, F. Oehler, F. Tang, R. A. Oliver, C. J. Humphreys, D. Tytko, P.-P. Choi, D. Raabe, F. Brunner, M. Weyers
    Semicond. Sci. Technol. 31 (2016) 085007
  11. Development of semipolar (11-22) LEDs on GaN templates
    B. Corbett, Z. Quan, D. V. Dinh, G. Kozlowski, D. O'Mahony, M. Akhter, S. Schulz, P. Parbrook, P. Maaskant, M. Caliebe, M. Hocker, K. Thonke, F. Scholz, M. Pristovsek, Y. Han, C. J. Humphreys, F. Brunner, M. Weyers, T. M. Meyer, L. Lymperakis
    Proc. SPIE 9768 (2016) 97681G
  12. Towards defect free semi-polar GaN templates on pre-structured sapphire
    Y. Han, M. Caliebe, F. Hage, Q. Ramasse, M. Pristovsek, T. Zhu, F. Scholz, C. J. Humphreys phys. stat. sol. (b) 253 (2016) 834-839
  13. Comparative study of (0001) and (11-22) InGaN based light emitting diodes
    M. Pristovsek, C. J. Humphreys, S. Bauer, M. Knab, K. Thonke, G. Kozlowski, D. O'Mahony, P. Maaskant, B. Corbett
    Jap. J. Appl. Phys. 55 (2016) 05FJ10
  14. MOVPE growth and indium incorporation of polar, semipolar (11-22) and (20-21) InGaN
    D. V. Dinh, M. Pristovsek, M. Kneissl
    phys. stat. sol. (b) 253 (2016) 93-98
  15. Optimizing GaN (11-22) hetero-epitaxial templates grown on (10-10) sapphire
    M. Pristovsek, M. Frentrup, Y. Han, C. J. Humphreys
    phys. stat. sol. (b) 253 (2016) 61-66
  16. Effect of heterostructure design on carrier injection and emission characteristics of 295 nm light emitting diodes
    F. Mehnke, C. Kuhn, J. Stellmach, T. Kolbe, N. Lobo-Ploch, J. Rass, M.-A. Rothe, C. Reich, N. Ledentsov, M. Pristovsek, T. Wernicke, M. Kneissl
    J. Appl. Phys. 117 (2015) 195704
  17. Origin of faceted surface hillocks on semi-polar (11-22) GaN templates grown on pre-structured sapphire
    Y. Han, M. Caliebe, M. Kappers, F. Scholz, M. Pristovsek, C. Humphreys
    J Crystal Growth 415 (2015) 710-715
  18. Low defect large area semi-polar (11-22) GaN grown on patterned (113) silicon
    Markus Pristovsek, Yisong Han, Tongtong Zhu, Martin Frentrup, Menno J. Kappers, Colin J. Humphreys, Grzegorz Kozlowski, Pleun Maaskant, Brian Corbett
    phys. stat. sol. (b) 252 (2015) 710-715
  19. Surface and crystal structure of nitridated sapphire substrates and their effect on polar InN layers
    D. Skuridina, D. V. Dinh, M. Pristovsek, B. Lacroix, M.-P. Chauvat, P. Ruterana, M. Kneissl, P. Vogt
    Appl. Surf. Sci. 307 (2014) 461-467
  20. Wavelength limits for InGaN quantum wells on GaN
    M. Pristovsek
    Appl. Phys. Lett. 102 (2013) 242105
  21. Polarity determination of polar and semipolar (11-22) InN and GaN by valence band photoemission spectroscopy
    D. Skuridina, Duc V. Dinh, M. Pristovsek, M. Kneissl, P. Vogt, B. Lacroix, P. Ruterana, M. Hoffman, Z. Sitar
    J. Appl. Phys. 114 (2013) 173503
  22. Role of nitridation on polarity and growth of InN by metal-organic vapor phase epitaxy
    Duc V. Dinh, D. Skuridina, S. Solopow, M. Pristovsek, P. Vogt, M. Kneissl
    J. Crystal Growth 376 (2013) 17-22
  23. Surface transitions during InGaN growth on GaN (0001) in metal-organic vapour phase epitaxy
    M. Pristovsek, A. Kadir, M. Kneissl
    Jap. J. Appl. Phys. 52 (2013) 08JB23
  24. Evolution of Indium Rich InGaN Layers During Direct Growth on Nitridated Sapphire in Metal-Organic Vapor Phase Epitaxy
    Duc V. Dinh, S. Solopow, M. Pristovsek, M. Kneissl
    Jap. J. Appl. Phys. 52 (2013) 08JD03
  25. Growth mode transition and relaxation of thin InGaN layers on GaN (0001)
    M. Pristovsek, A. Kadir, C. Meissner, T. Schwaner, M. Leyer, J. Stellmach, M. Kneissl, F. Ivaldi, S. Kret
    J. Crystal Growth 372 (2013) 65-72
  26. Energetics of InGaAs quantum dot formation and relaxation on GaAs (001)
    M. Pristovsek, R. Kremzow, M. Kneissl
    Jap. J. Appl. Phys. 52 (2013) 041201
  27. Structural and optical properties of semipolar (11-22) AlGaN grown on (10-10) sapphire by metal-organic vapour phase epitaxy
    J. Stellmach, F, Mehnke, M. Frentrup, C. Reich, J. Schlegel, M. Pristovsek, T. Wernicke, M. Kneissl
    J. Crystal Growth 367 (2013) 42-47
  28. Indium incorporation efficiency and critical layer thickness in (20-21) InGaN on GaN
    S. Ploch, T. Wernicke, M. Frentrup, M. Pristovsek, M. Weyers, M. Kneissl
    Appl. Phys. Lett. 101 (2012) 202102
  29. Influence of group III and group V partial pressures on the size and density of InGaN quantum dots in MOVPE
    A. Kadir, K. Bellmann, T. Simoneit, M. Pristovsek, M. Kneissl
    phys. stat. sol. (a) 209(12) (2012) 2487-2491
  30. Topography of (20-21) AlGaN, GaN and InGaN layers grown by metal-organic vapor phase epitaxy
    S. Ploch, T. Wernicke, J. Thalmair, M. Lohr, M. Pristovsek, M. Weyers, J. Zweck, M. Kneissl
    J. Crystal Growth 356 (2012) 70-74
  31. MOVPE growth of semipolar (11-22) AlN on (10-10) sapphire
    J. Stellmach, M. Frentrup, F. Mehnke, M. Pristovsek, T. Wernicke, M. Kneissl
    J. Crystal Growth 335 (2012) 59-62
  32. Growth and Characterizations of Semipolar (11-22) InN
    Duc V. Dinh, D. Skuridina, S. Solopow, M. Frentrup, M. Pristovsek, P. Vogt, M. Kneissl, F. Ivaldi, S. Kret, A. Szczepanska
    J. Appl. Phys. 112 (2012) 013530
  33. In situ access to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces
    Oliver Supplie, Thomas Hannappel, Markus Pristovsek, Hennig Döscher
    Phys. Rev. B 86 (2012) 035308
  34. Surface diffusion and layer morphology of (11-22) GaN grown by metal-organic vapor phase epitaxy
    S. Ploch, T. Wernicke, D. V. Dinh, M. Pristovsek, M. Kneissl
    J. Appl. Phys. 111 (2012) 033526
  35. Comparison study of N- and In-polar {0001} InN layers grown by MOVPE
    Duc V. Dinh, M. Pristovsek, S. Solopow, D. Skuridina, M. Kneissl
    phys. stat. sol. (c) 9(3-4) (2012) 977-981
  36. Surface transition induced island formation on thin strained InGaN layers on GaN (0001) in metal-organic vapour phase epitaxy
    M. Pristovsek, A. Kadir, C. Meissner, T. Schwaner, M. Leyer, M. Kneissl
    J. Appl. Phys. 110 (2011) 073527
  37. Growth mechanism of InGaN quantum dots during metalorganic vapour phase epitaxy
    A. Kadir, C. Meissner, T. Schwaner, M. Pristovsek, M. Kneissl
    J Crystal Growth 314 (2011) 40–45
  38. Single phase 11-22 GaN on (10-10) sapphire grown by metal-organic vapor phase epitaxy
    S. Ploch, J. B. Park, J. Stellmach, T. Schwaner, M. Frentrup, T. Niermann, T. Wernicke, M. Pristovsek, M. Lehmann, M. Kneissl
    J Crystal Growth 331 (2011) 25–28
  39. Growth Mechanism of Embedded Self-Organized InN Quantum Dots on GaN (0001) in MOVPE
    F. Ivaldi, J. Domagala, S. Kret, C. Meissner, M. Pristovsek, M. Högele, M. Kneissl
    Jap. J. Appl Phys. 50 (2011) 031004
  40. Crystal orientation of GaN layers on (10-10) Sapphire
    M. Frentrup, S. Ploch, M. Pristovsek, M. Kneissl
    phys. stat. sol. (b) 248 (3) (2011) 583–587
  41. High aluminium content and high growth rates of AlGaN in a close-coupled showerhead MOVPE reactor
    J. Stellmach, M. Pristovsek, Ö. Savaş, J. Schlegel, E. Y. Yakovlev, M. Kneissl
    J. Crystal Growth 315 (2011) 229–232
  42. Determination of the complex linear electro-optic coefficient of GaAs and InP
    M. Pristovsek
    phys. stat. sol. (b) 247 (2010) 1974–1978
  43. Orientation control of GaN 11-22 and 10-13 grown on (10-10) sapphire by metal-organic vapor phase epitaxy
    S. Ploch, M. Frentrup, T. Wernicke, M. Pristovsek, M. Weyers, M. Kneissl
    J. Crystal Growth 312 (2010) 2171–2174
  44. Growth of semipolar (10-1-3) InN on m-plane sapphire using metal-organic vapor phase epitaxy
    D. V. Dinh, M. Pristovsek, R. Kremzow, M. Kneissl
    phys. stats. sol. RRL 4 (2010) 127–129
  45. Metalorganic Vapor Phase Epitaxy of InN on GaN using tertiary-butylhydrazine as Nitrogen Source
    R. Kremzow, M. Pristovsek, J. Stellmach, . Savas, M. Kneissl
    J. Crystal Growth 312 (2010) 1983–1985
  46. Shape of InN nanostructures on GaN (001)
    S. Ploch, C. Meißner, M. Pristovsek, M. Kneissl
    phys. stat. sol. (c) 6(S2) (2009) S574–S577
  47. Growth mode of InGaN on GaN (0001) in MOVPE
    M. Pristovsek, J. Stellmach, M. Leyer, M. Kneissl
    phys. stat. sol. (c) 6(S2) (2009) S565–S569
  48. Volmer-Weber growth mode on InN quantum dots on GaN (0001) by MOVPE
    C. Meißner, S.Ploch, M. Pristovsek, M. Kneissl
    phys. stat. sol. (c) 6(S2) (2009) S545–S548
  49. Growth and characterisation of manganese doped InAsP
    M. Pristovsek, C. Meißner, M. Kneissl, R. Jakomin, S. Vantaggio, L. Tarricone
    J. Crystal Growth 310 (2008) 5028–5031
  50. Indium nitride quantum dot growth modes in metalorganic vapour phase epitaxy
    C. Meissner, S. Ploch, M. Leyer, M. Pristovsek, M. Kneissl
    J. Crystal Growth 310 (2008) 4959–4962
  51. The critical thickness of InGaN on (0001) GaN
    M. Leyer, J. Stellmach, C. Meissner, M. Pristovsek, M. Kneissl
    J. Crystal Growth 310 (2008) 4913–4915
  52. Ripening of InAs quantum dots on GaAs (0 0 1) investigated with in situ scanning tunneling microscopy in metal-organic vapor phase epitaxy
    R. Kremzow, M. Pristovsek, M. Kneissl
    J. Crystal Growth 310 (2008) 4751–5753
  53. Properties of InMnP (0 0 1) grown by MOVPE
    M. Pristovsek, A. Philippou, B. Rähmer, W. Richter
    J. Crystal Growth 310 (2008) 4046–4049
  54. Segregation and desorption of antimony in InP in MOVPE
    S. Weeke, M. Leyer, M. Pristovsek, F. Brunner, W. Richter
    J. Crystal Growth 298 (2007) 159–162
  55. Homoepitaxial growth rate measurement using in-situ Reflectance Anisotropy Spectroscopy
    C. Kaspari, M. Pristovsek, W. Richter
    J. Crystal Growth 298 (2007) 46–49
  56. in-situ Scanning Tunnelling Microscopy during Metal-Organic Vapour Phase Epitaxy
    M. Pristovsek, B. Rähmer, M. Breusig, R. Kremzow, W. Richter
    J. Crystal Growth 298 (2007) 8–11
  57. Modified STM images growth inside an MOCVD chamber
    M. Pristovsek
    compound semiconductor 11 (2006) 14–16
  58. In-situ Scanning Tunneling Microscopy during Metal-organic Vapour Phase Epitaxy
    B. Rähmer, M. Pristovsek, M. Breusing, R. Kremzow, W. Richter
    Appl. Phys. Lett. 89(6) (2006) 063108
  59. InN growth on sapphire using different nitridation procedures
    M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, W. Richter
    phys. stat. sol. (a) 203 (2006) 1622–1625
  60. Development of InN metalorganic vapor phase epitaxy using in-situ spectroscopic ellipsometry
    M. Drago, C. Werner, M. Pristovsek, U. W. Pohl, W. Richter
    Crys. Res. Technol. 40(10-11) (2005) 993–996
  61. A fast reflectance anisotropy spectrometer for in situ growth monitoring
    C. Kaspari, M. Pristovsek, W. Richter
    phys. stat. sol. (b) 242(13) (2005) 2561–2569
  62. Growth of strained GaAsSb layers on GaAs (001) in MOVPE
    M. Pristovsek, M. Zorn, U. Zeimer, M. Weyers
    J. Crystal Growth 276 (2005) 347–353
  63. InN Growth and Annealing Investigations using in-situ Spectroscopic Ellipsometry
    M. Drago, T. Schmidtling, C. Werner, M. Pristovsek, U. Pohl, W. Richter
    J. Crystal Growth 272 (2004) 87–93
  64. Nitrogen.arsenic exchange processes and investigation of the nitrided GaAs surfaces in MOVPE
    V. Hoffmann, F. Poser, C. Kaspari, S. Weeke, M. Pristovsek, W. Richter
    J. Crystal Growth 272 (2004) 30–36
  65. Structural analysis by reflectance anisotropy spectroscopy: As and Sb on GaAs(110)
    O. Pulci, K. Fleischer, M. Pristovsek, S. Tsukamoto, R. D. Sole, W. Richter
    J. Phys.: Cond. Matter 16 (2004) S4367–S4374
  66. In-situ study of low-temperature growth and Mn and Si and Sn doping of GaAs (001) in molecular beam epitaxy
    M. Pristovsek, S. Tsukamoto
    J. Crystal Growth 265 (2004) 425–433
  67. Lateral short range ordering of step bunches in InGaAs/GaAs superlattices
    M. Hanke, M. Schmidbauer, R. Kühler, H. Kirmse, M. Pristovsek
    J. Appl. Phys. 95(4) (2004) 1736–1739
  68. In-situ study of GaAs growth mechanisms using tri-methyl gallium and tri-ethyl gallium precursors in MOVPE
    M. Pristovsek, M. Zorn, M. Weyers
    J. Crystal Growth 262 (2004) 78–83
  69. Gallium-rich reconstructions on GaAs(001)
    M. Pristovsek, S. Tsukamoto, A. Ohtake, N. Koguchi, B. G. Orr, W. G. Schmidt, J. Bernholc
    phys. stat. sol. b 240 (2003) 91–98
  70. In situ scanning tunneling microscopy of InAs quantum dots on GaAs(0 0 1) during molecular beam epitaxial growth
    G. R. Bell, M. Pristovsek, S. Tsukamoto, B. G. Orr, Y. Arakawa, N. Koguchi
    Surf. Sci. 544(2-3) (2003) 234–240
  71. Ga-rich GaAs(0 0 1) surfaces observed by STM during high-temperature annealing in MBE
    S. Tsukamoto, M. Pristovsek, A. Ohtake, B. G. Orr, G. R. Bell, T. Ohno, N. Koguchi
    J. Crystal Growth 251 (2003) 46–50
  72. Influence of the reconstruction of GaAs (0 0 1) on the electro-optical bulk properties
    M. Pristovsek, S. Tsukamoto, B. Han, J.-T. Zettler, , W. Richter
    J. Crystal Growth 248 (2003) 254–258
  73. Structure of Ga-stabilized GaAs(0 0 1) surfaces at high temperatures
    A. Ohtake, S. Tsukamoto, M. Pristovsek, N. Koguchi
    Appl. Surf. Sci. 212-213 (2003) 146–150
  74. Novel Organopalladium Material Formed on a Sulfur-Terminated GaAs(001) Surface
    M. Arisawa, S. Tsukamoto, M. Shimoda, M. Pristovsek, A. Nishida
    Jpn. J. Appl. Phys. 41(11A) (2002) L1197–L1199
  75. Structure analysis of the Ga-stabilized GaAs(001) – c(8×2) surface at high temperatures
    A. Ohtake, S. Tsukamoto, M. Pristovsek, N. Koguchi, M. Ozeki
    Phys. Rev. B 65 (2002) 233311
  76. Real-time calibration of wafer temperature and growth rate and composition by optical in-situ techniques during AlxGa1-xAs growth in MOVPE
    K. Haberland, A. Kaluza, M. Zorn, M. Pristovsek, H. Hardtdegen, M. Weyers, J.-T. Zettler, W. Richter
    J. Crystal Growth 240 (2002) 87–97
  77. In-situ Determination of the Carrier Concentration of (001) GaAs by Reflectance Anisotropy Spectroscopy
    M. Pristovsek, S. Tsukamoto, N. Koguchi, B. Han, K. Haberland, J.-T. Zettler, W. Richter, M. Zorn, M. Weyers
    phys. stat. sol. (a) 188 (2001) 1423–1429
  78. In-situ Investigation of GaAs (001) Intrinsic Carbon p-Doping in Metal-organic Vapour Phase Epitaxy
    M. Pristovsek, B. Han, J.-T. Zettler, W. Richter
    J. Crystal Growth 221 (2000) 149–155
  79. Surface structure of ordered InGaP(001): The (2×4) reconstruction
    P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser
    Phys. Rev. B 62(19) (2000) 12601–12604
  80. Atomic structure and composition of the (2×4) reconstruction of InGaP(001)
    P. Vogt, K. Lüdge, M. Zorn, M. Pristovsek, W. Braun, W. Richter, N. Esser
    J. Vac. Sci. Technol. B 18 (2000) 2210–2214
  81. Diffusion of Ga on GaAs (113) in [1-10] direction in MOVPE
    M. Pristovsek, F. Poser, J.-T. Zettler, W. Richter
    Appl. Surf Sci. 166 (2000) 433–436
  82. Dynamic Study of the Surfaces of (001) Gallium Arsenide in Metal-organic Vapour Phase Epitaxy during Arsenic Desorption
    M. Pristovsek, T. Trepk, M. Klein, J.-T. Zettler, W. Richter
    J. Appl. Phys. 87 (2000) 1245–1250
  83. GaP(001) and InP(001): Reflectance Anisotropy and Surface Geometry
    N. Esser, W. Schmidt, J. Bernholc, A. Frisch, P. Vogt, M. Zorn, M. Pristovsek, W. Richter, F. Bechstedt, T. Hannappel, S. Visbeck
    J. Vac. Sci. Technol. B 17 (1999) 1691–1696
  84. The (2×4) GaP(001) Surface: Atomic Structure and Optical Anisotropy
    A. Frisch, W. Schmidt, J. Bernholc, M. Pristovsek, N. Esser, W. Richter
    Phys. Rev. B 60(4) (1999) 2488–2494
  85. Spectroscopic process sensors in MOVPE device production
    K. Haberland, P. Kurpas, M. Pristovsek, J.-T. Zettler, M. Weyers, W. Richter
    Appl. Phys. A 68 (1999) 309–313
  86. Comparative study of the GaAs (113) and (115) and (001) and (11-5) and (11-3) and and (110) surfaces by atomic force microscopy and low energy electron diffraction and and reflectance anisotropy spectroscopy
    M. Pristovsek, H. Menhal, T. Schmidtling, N. Esser, W. Richter
    Microelectronics Journal 30 (1999) 449–453
  87. In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: a comparison to hydrogen atmosphere
    H. Hardtdegen, M. Pristovsek, H. Menhal, J.-T. Zettler, W. Richter, D. Schmitz
    J. Crystal Growth 195 (1998) 211–216
  88. Response of the surface dielectric function to dynamic surfaces modifications: application of reflectance anisotropy spectroscopy and spectroscopic ellipsometry
    J.-T. Zettler, M. Pristovsek, T. Trepk, A. Shkrebtii, E. Steimetz, M. Zorn, W. Richter
    Thin Solid Films 313-314 (1998) 537–543
  89. Real-time monitoring of MOVPE device growth by reflectance anisotropy spectroscopy and related optical techniques
    J.-T. Zettler, K. Haberland, M. Zorn, M. Pristovsek, W. Richter, P. Kurpas, , M. Weyers
    J. Crystal Growth 195 (1998) 151–162
  90. Reconstructions of the GaAs (113) surface
    M. Pristovsek, H. Menhal, T. Wehnert, J.-T. Zettler, T. Schmidtling, N. Esser, W. Richter, C. Setzer, J. Platen, K. Jacobi
    J. Crystal Growth 195 (1998) 1–5
  91. Photoluminescence scanning nearfield optical microscopy on III-V quantum dots
    D. Pahlke, F. Poser, E. Steimetz, M. Pristovsek, N. Esser, W. Richter
    phys. stat. sol. (a) 170 (1998) 401
  92. Atomic structure of InP(001)-(2×4): A dimer reconstruction
    W. Schmidt, F. Bechstedt, N. Esser, M. Pristovsek, C. Schultz, W. Richter
    Phys. Rev. B. 57(23) (1998) 14596–14599
  93. Ellipsometric and Reflectance-Anisotropy Measurements on Rotating Samples
    K. Haberland, O. Hunderi, M. Pristovsek, J.-T. Zettler, W. Richter
    Thin Solid Films 313-314 (1998) 620–624
  94. Optical anisotropies of InP(001) surfaces
    C. Goletti, N. Esser, U. Resch-Esser, V. Wagner, J. Foeller, M. Pristovsek, W. Richter
    J. Appl. Phys. 81 (1997) 3611–3615
  95. Structure of InP (001) surfaces prepared by decapping and by ion bombardment and annealing
    D. Pahlke, J. Kinsky, C. Schultz, M. Pristovsek, M. Zorn, N. Esser, W. Richter
    Phys. Rev. B 56 (1997) R1661–R1663
  96. In-situ surface passivation of III-V-semiconductors in MOVPE by amorphous As and P layers
    K. Knorr, M. Pristovsek, U. Resch-Esser, N. Esser, M. Zorn, W. Richter
    J. Crystal Growth 170 (1997) 230–236
  97. Semiconductor Characterization – Present Status and Future Needs
    J.-T. Zettler, W. Richter, K. Ploska, M. Zorn, J. Rumberg, C. Meyne, M. Pristovsek
    (AIP Press Woodbury NY, 1996) 537–543
  98. Scanning-tunneling-microscopy study of InP (001) surfaces prepared by UHV decapping of MOVPE-grown samples
    N. Esser, U. Resch-Esser, M. Pristovsek, W. Richter
    Phys. Rev. B 53(20) (1996) R13257–R13259
  99. Growth oscillations with monolayer periodicity monitored by ellipsometry during MOVPE of GaAs (001)
    J.-T. Zettler, T. Wethkamp, M. Zorn, M. Pristovsek, C. Meyne, K. Ploska, W. Richer
    Appl. Phys. Lett. 67 (1995) 3783–3785
  100. Metalorganic Vapour Phase Epitaxial Growth on Vicinal GaAs (001) Surfaces Studied by Reflectance Anisotropy Spectroscopy
    K. Ploska, M. Pristovsek, W. Richter, J. Jönsson, I. Kamiya, J.-T. Zettler
    phys. stat. sol. (a) 152 (1995) 49–59
  101. Reflectance Anisotropy Oscillations during MOCVD and MBE Growth of GaAs (001)
    J.-T. Zettler, J. Rumberg, K. Ploska, K. Stahrenberg, M. Pristovsek, W. Richter, M. Wassermeier, P. Schützendüwe, L. Däweritz
    phys. stat. sol. (a) 152 (1995) 35–47
  102. Surface processes before and during growth of GaAs(001)
    K. Ploska, J.-T. Zettler, W. Richter, J. Jönsson, F. Reinhardt, J. Rumberg, M. Pristovsek, M. Zorn, D. Westwood, R. H. Williams
    J. Crystal Growth 145 (1994) 44–52
  103. Efficiency of arsenic and phosphorous precursors investigated by reflectance anisotropy spectroscopy
    P. Kurpas, J. Jönsson, W. Richter, D. Gutsche, M. Pristovsek, M. Zorn
    J. Crystal Growth 145 (1994) 36–43

Memberships of Academic Societies

Japanese Society for Applied Physics

Deutsche Physikalische Gesellschaft

Deutscher Hochschulverband