*Japanese*

Faculty Member

photo

Institute of Materials and Systems for Sustainability Center for Integrated Research of Future Electronics

LIU Yuhuai, Visiting Professor

(Professor, Zhengzhou University, China)

Academic Background

Work Experience

Degree

1999, Doctor of Philosophy, Anhui Institute of Optics and Fine Mechanics (AIOFM), Chinese Academy of Sciences, China

Research field

Epitaxial growth of nitride semiconductors using metal organic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE), Nitride semiconductor-based devices

Research Papers

  1. Jinlong Yao, Yuhuai Liu, Yuanhang Shi,"A Speech Control System for Intelligent Industry",International Conference on Computer and Information Technology Application (ICCITA 2016),Advances in Computer Science Research,pp.193-197, 2016
  2. Wei Zhang, Yuhuai Liu, "The Design of A Voice Control System for Smart House", Appl. Mech. Mat., 644-650 (2014) pp.741-745.
  3. Yuhuai Liu, Fang Wang, Wei Zhang, Shiyang, Yuantao Zhang, Ryuji Katayama, Takahashi Matsuoka, "Key factors for metal organic chemical vapor deposition of InGaN films with high InN molar fraction", Appl. Mech. Mat., 341-342(2013) pp.204-207.
  4. Fang Wang, Wei Zhang, Yuhuai Liu, Shiyang Ji, Yuantao Zhang, Ryuji Katayama, Takahashi Matsuoka, "A novel material for laser diodes of optical fiber communication", Adv. Mat. Res., 760-762(2013) pp.45-49.
  5. Yuantao Zhang, Takeshi Kimura, Kiattiwut Prasertusk, Takuya Iwabuchi, Suresh Kumar, Yuhuai Liu, Ryuji Katayama, Takashi Matsuoka, "Optical properties of InN films grown by pressurized-reactor metalorganic vapor phase epitaxy", Thin Solid Film, 536 (2013)pp.512-515.
  6. Takeshi Kimura, Kiattiwut Prasertsuk, Yuantao Zhang, Yuhuai Liu, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka, "Phase diagram on phase purity of InN grown pressurized-reactor MOVPE", phys. stat. sol. (c), 9(3-4) (2012) pp. 654-657.
  7. Kiattiwut Prasertsuk, Masaki Hirata, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Takuya Iwabuchi, Ryuji Katayama, Takashi Matsuoka, "Relationship between residual carrier density and phase purity in InN grown by pressurized-reactor MOVPE", phys. stat. sol. (c), 9(3-4) (2012) pp. 681-684.
  8. Jung Gon Kim, Yasuhito Kamei, Atsuhito Kimura, Noriyuki Hasuike, Hiroshi Harima, Kenji Kisoda , Yu Huai Liu, and Takashi Matsuoka, "Raman-scattering characterization of InN films grown by pressurized metal organic vapor phase epitaxy", phys. stat. sol. (b), 249 (2012) pp. 779-783.
  9. Kanako Shojiki, Takashi Hanada, Takaaki Shimada, Yuhuai Liu, Ryuji Katayama, and Takashi Matsuoka, "Tilted Domain and Indium Content of InGaN Layer on m-Plane GaN Substrate Grown by Metalorganic Vapor Phase Epitaxy", Jpn. J. Appl. Phys. 51 (2012) 04DH01.
  10. Takuya Iwabuchi, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Kiattiwut Prasertsuk, Haruna Watanabe, Noritaka Usami, Ryuji Katayama, and Takashi Matsuoka, "Effect of Phase Purity on Dislocation Density of Pressurized-Reactor Metalorganic Vapor Phase Epitaxy Grown InN", Jpn. J. Appl. Phys. 51 (2012) 04DH02.
  11. Shintaro Miyazawa, Satoru Ichikawa, Yuhuai Liu, Shiyang Ji, Takashi Matsuoka and Hideo Nakae, "Novel Substrate LaBGeO5 Lattice-matching to InN", phys. stat. sol. (a), 208 (2011) pp. 1195-1198.
  12. Takashi Matsuoka, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Kiattiwut Prasertusk and Ryuji Katayama,"Paving the way to high-quality indium nitride: the effects of pressurized reactor",Proc. SPIE 7945 (2011) 794519.
  13. Yuantao Zhang, Yuhuai Liu, Takeshi Kimura, Masaki Hirata, Kiattiwut Prasertusk, Ryuji Katayama, and Takashi Matsuoka, "Effect of Growth Temperature on Structure Properties of InN Grown by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy ", phys. stat. sol. (c), 8 (2011) pp. 482-484.
  14. Takashi Hanada, Taka-aki Shimada, Shi-Yang Ji, Kenji Hobo, Yuhuai Liu, and Takashi Matsuoka , "Strain relaxation mechanism of InGaN thin film grown on m-GaN", phys. stat. sol. (c), 8 (2011) pp. 444-446.
  15. Yuhuai Liu, Takeshi Kimura, Taka-aki Shimada, Masaki Hirata, Masaki Wakaba, Masashi Nakao, Shiyang Ji, and Takashi Matsuoka, "MOVPE Growth of InN: A Comparison between a Horizontal and a Vertical Reactor", phys. stat. sol. (c), 6 (2009) pp. S381-S384.
  16. Masashi Nakao, Takeshi Kimura, Yuhuai Liu, Shiyang Ji, and Takashi Matsuoka, "Grating Fabrication on Nitrides Grown by MOVPE for DFB Lasers", phys. stat. sol. (c), 6 (2009) pp. S893-S896.
  17. Yuhuai Liu, Shinya Koide, Hideto Miyake, Kazumasa Hiramatsu, Atsushi Nakamura and Nobuyoshi Nambu, "Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia", phys. stat. solid. (c), 5 (2008) pp.1522-1524.
  18. Yuhuai Liu, Shinya Koide, Hideto Miyake, Kazumasa Hiramatsu, Atsushi Nakamura and Nobuyoshi Nambu, "Reaction route of GaN powder formation via sintering gallium ethylenediamine tetraacetic acid complexes in ammonia", Jpn. J. Appl. Phys., 46(12) (2007) pp.7693-7698.
  19. Yuhuai Liu, Shinya Koide, Hideto Miyake, Kazumasa Hiramatsu, Atsushi Nakamura and Nobuyoshi Nambu, "Synthesis of III-nitride microcrystals using metal-EDTA complexes", phys. stat. solid. (c), 4 (2007) pp. 2346-2349.
  20. Kenji Tsujisawa, Shinya Kishino, Yuhuai Liu, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, Mitsuhiro Tanaka, "High temperature growth of AlN film by LP-HVPE", phys. stat. solid. (c), 4 (2007) pp. 2252-2255.
  21. Keisuke Nakao, Da-Bing Li, Yu-Huai Liu, Hideto Miyake, Kazumasa Hiramatsu, "Dependence of In mole fraction in InGaN on GaN facets", phys. stat. solid. (c), 4 (2007) pp. 2383-2386.
  22. Yu-Huai Liu, Tomoaki Tanabe, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata and Mitsuhiro Tanaka, "Fabrication of thick AlN film by low-pressure hydride vapor phase epitaxy", phys. stat. solid. (c), 3 (2006) pp.1479-1482.
  23. Takuya Katsuno, Yuhuai Liu, Dabing Li, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, Mitsuhiro Tanaka, "n-type conductivity control of AlGaN with high Al mole fraction", phys. stat. solid. (c), 3 (2006) pp.1435-1438.
  24. Da-Bing Li, Yu-Huai Liu, Takuya Katsuno, Keisuke Nakao, Kazuya Nakamura, Masakazu Aoki, Hideto Miyake, Kazumasa Hiramatsu, "Enhanced emission efficiency of InGaN films with Si doping", phys. stat. solid. (c), 3 (2006) pp.1944-1948.
  25. 小出晋也、中村和哉、劉玉懐、三宅秀人、平松和政、中村淳、南部信義, "金属EDTA 錯体を用いた GaN 系青色発光材料の合成", 信学技報, 106, No.45,46 (2006) pp. 39-44.
  26. Yu -Huai Liu, Tomoaki Tanabe, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, Mutsuhiro Tanaka and Yoshihiko Masa, "Growth of thick AlN layer by hydride vapor phase epitaxy", Jpn. J. Appl. Phys. 44 (2005) pp. L505-L507.
  27. 増田規宏、石賀章、劉玉懐、三宅秀人、平松和政、柴田智彦、田中光浩、原口雅也、桑野範之, "研磨 AlN 基板を用いた AlGaN の成長と評価", 信学技報, 105, No.326 (2005) pp.17-22.
  28. 勝野琢弥、大西孝、劉玉懐、黎大兵、柴田智彦、田中光浩、三宅秀人、平松和政, "高 Al モル分率 AlGaN への Si ドーピングによる影響", 信学技報, 105, No.330 (2005) pp.23-28.
  29. 辻澤健一、田鍋智章、阿部晃久、劉玉懐、三宅秀人、平松和政, "HVPE 法によるAlN 厚膜の作製", 信学技報, 105, No.94 (2005) pp.1-6.
  30. Yuhuai Liu, Akira Ishiga, Takashi Onishi, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, and Mitsuhiro Tanaka, "High quality AlGaN/AlN superlattices grown on AlN/sapphire template by MOVPE", Inst. Phys. Conf. Ser. no.184 (2004) pp.247-250.
  31. Akira Ishiga, Takashi Onishi, Yuhuai Liu, Masaya Haraguchi; Noriyuki Kuwano, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, and Mitsuhiro Tanaka, "Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayers", Mater. Res. Soc. Symp. Proc. 31 (2004) pp.131-136.
  32. 大西孝、石賀章、劉玉懐、柴田智彦、田中光浩、三宅秀人、平松和政, "高 Al モ ル分率 AlGaN への Mg ドーピング効果", 信学技報, 104, No.357 (2004) pp.43-47.
  33. 石賀章、大西孝、劉玉懐、原口雅也、桑野範之、柴田智彦、田中光浩、三宅秀人、平松和政, "凹凸 AlN 基板を用いた低転位密度 AlGaN の MOVPE 成長", 信学技報,104, No.357 (2004) pp.23-26.
  34. Yuhuai Liu, Hongdong Li, Jinping Ao, YongBae Lee, Tao Wang, and Shiro Sakai, "Influence of undoped GaN layer thickness to the performance of AlGaN/GaN-based ultraviolet light-emitting diodes", J. Cryst. Growth, 268/1-2 (2004) pp.30-34.
  35. Jin-Ping Ao, Tao Wang, Daigo Kikuta, Yu-Huai Liu, Shiro Sakai and Yasuo Ohno, "AlGaN/GaN high electron mobility transistor with thin buffer layers", Jpn. J. Appl. Phys., 42 (2003) pp.1588-1589.
  36. Hongdong Li, Tao Wang, Nan Jiang, Yuhuai Liu, Jie Bai, and Shiro Sakai, "Interactions between inversion domains and InGaN/GaN multiple quantum wells investigated by transmission electron microscopy", J. Cryst. Growth, 247 (2003) pp.28-34.
  37. Tao Wang, Yuhuai Liu, YongBae Lee, Jinping Ao, Jie Bai, and Shiro Sakai, "1mW AlInGaN-based ultraviolet light-emitting diode with an emission wavelength of 348nm grown on sapphire substrate", Appl. Phys. Lett. 81, No.14 (2002) pp.2508-2509.
  38. Tao Wang, Yuhuai Liu, YongBae Lee, Yuji Izumi, Jinping Ao, Jie Bai, Hongdong Li, Shiro Sakai, "Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes", J. Cryst. Growth, 235 (2002) pp.177-182.
  39. Jie Bai, Tao Wang, Yuhuai Liu, Yoshiki naoi, Hongdong Li, and Shiro Sakai, "Influence of pyramidal defects on photoluminescene of Mg-doped AlGaN/GaN superlattice structures", Jpn. J. Appl. Phys. , 41 (2002) pp.5909-5911.
  40. Young-Bae Lee, Tao Wang, Yu-Huai Liu, Jin-Ping Ao, Hong-Dong Li, Hisao Sato, Katsushi Nishino, Yoshiki Naoi, and Shiro Sakai, "Fabrication of hight-output-power AlGaN/GaN-based UV-light-emitting diode using a Ga droplet layer", Jpn. J. Appl. Phys., 4 (2002) pp. L1037-L1039.
  41. Young-Bae Lee, Tao Wang, Yu-Huai Liu, Jin-Ping Ao, Yuji Izumi, Yves Lacroix, Hong-Dong Li, Jie Bai, Yoshiki Naoi and Shiro Sakai, "High performance 348 nm AlGaN/GaN-based UV light-emitting diode with a SiN buffer layer", Jpn. J. Appl. Phys., 41 (2002) pp.4450-4453.
  42. Hongdong Li, Tao Wang, Yuhuai Liu, Jinping Ao, and Shiro Sakai, "V-shaped defects in AlGaN/GaN superlattices grown on thin undoped-GaN layers on sapphire substrate", Jpn. J. Appl. Phys., 41, No. 6B (2002) pp. L732-L735.
  43. Shiro Sakai, Tomoya Sugahara, Yong Baei Lee, Tao Wang, Yuhuai Liu and Hongdong Li, "AlGaInN-based UV LEDs", Electrochemical Society Proceedings, 2002-14 (2002) pp.120-130.
  44. Tao Zhang, Yuhuai Liu, Minguang Gao, Yiqun Lu, "External period stimulation control of acoustooptical chaos ", Acta Photonica Sinica, 29, No.3 (2000) pp.231-235.
  45. Tao Zhang, Yuhuai Liu, Shengyuan Wang, Minguang Gao, Yiqun Lu, "Period perturbation feedback control of acoustooptical chaos ", Chinese Journal of Quantum Electronics, 17, No.2 (2000) pp.121-125.
  46. Yuhuai Liu, Fang Wang, Yiqun Lu, "Control of super-chaos by parallel driven acoustooptical bistable system ", Chinese Laser Journal, 20, No.4, (1999) pp.53-55.
  47. Yuhuai Liu, Minguang Gao, Yuchun Zhang, Yiqun Lu, "Dynamics behavior of DNA molecules under the modulated laser radiation ", Chinese Journal of Quantum Electronics, 16, No.6 (1999) pp.494-499.
  48. Yuhuai Liu, Shengyuan Wang, Minguang Gao, Yuchun Zhang, Yiqun Lu, "Dynamics of second order cascading acoustooptical bistable system", Chinese Journal of Quantum Electronics, 16, No.5 (1999) pp.335-339.
  49. Yuhuai Liu, Shengyuan Wang, Fang Wang, Yiqun Lu, "Synchronization of chaos in high order cascading acoustooptical bistable system ", Chinese Journal of Quantum Electronics, 16, No.3, (1999) pp.198-203.
  50. Yuhuai Liu, Shengyuan Wang, Minguang Gao, Yiqun Lu,"Chaos modulation effects in acoustooptical bistable system ", Acta Physica Sinica, 48, No.5(1999)pp.795-801.
  51. Yuhuai Liu, Shengyuan Wang, Yiqun Lu, "Control of super-chaos in two order cascading acoustooptical bistable systems ", Chinese Journal of Quantum Electronics, 16, No.2 (1999) pp.116-121.
  52. Yuhuai Liu, Jun Ma, Yiqun Lu, "Synchronization of subsystems driven by chaotic signals ", Acta Physica Sinica, 48, No.1 (1999) pp.10-15.
  53. Shengyuan Wang, Yuhuai Liu, Yiqun Lu, Jun Ma, Yuchun Zhang, Minguang Gao, " Two driver-one response synchronization of Lorenz and Rossler chaotic systems ", Chinese Journal of Quantum Electronics, 15, No.5 (1999) pp.267-230.
  54. Shengyuan Wang, Yuhuai Liu, Xiaohong Sun, Yiqun Lu, "Phase space evolution behaviors of Henon-like attractors ", Chinese Journal of Quantum Electronics, 15, No.3 (1999) pp.263-266.

Presentations

  1. X. Yang, S. Nitta,K. Nagamatsu, Y. H. Liu, Z. Sun, Z. Ye, J. Matsushita, Y. Honda, and H. Amano, "The Influence of Residual Boron in Reactor on the Quality of GaN Crystal Grown via MOVPE", 2016 Internationl Workshop on Nitride semiconductors, Florida, USA, October 2-7, 2016.
  2. Invited: Yuhuai Liu, "A Review on Growth of Aluminum Nitride for Ultraviolet Emitters", 2015 International Symposium on Single Crystal Diamond and Electronics, Xi-an, China, June 13-16, 2015.
  3. Kanako Shojiki, Takashi Hanada, Takaaki Shimada, Yuhuai Liu, Ryuji Katayama and Takashi Matsuoka, " Tilted domain and indium content of MOVPE-grown InGaN layer on m-plane GaN substrate ", 2011 International Conference on Solid State Devices and Materials (SSDM 2011), M-1-2, Nagoya, Japan, September 28-30, 2011.
  4. Takuya Iwabuchi, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Kiattiwut Prasertsuk, Ryuji Katayama and Takashi Matsuoka, " Effect of Phase Purity on Dislocation Density of PR-MOVPE-Grown InN ", 2011 International Conference on Solid State Devices and Materials (SSDM 2011), M-1-3, Nagoya, Japan, September 28-30, 2011.
  5. Takashi Hanada, Yuhuai Liu, Yuantao Zhang, Hiroo Tajiri, Osami Sakata, Takeshi Kimura, Kiattiwut Prasertusk, Tyuji Katayama, Takashi Matsuoka, "Temperature-Dependent Static Correlation Functions of Vibrational Atomic Displacements for InN Film Measured by X-ray Diffraction", 9th International Conference on Nitride Semiconductors, PD.3.31, Glasgow, UK, July 10-15, 2011.
  6. Kiattiwut Prasertsuk, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Takuya Iwabuchi, Ryuji Katayama, Takashi Matsuoka, " Relationship between residual carrier density and phase purity in InN grown by pressurized-reactor MOVPE", 9th International Conference on Nitride Semiconductors, PD.3.36, Glasgow, UK, July 10-15, 2011.
  7. Yuantao Zhang, Kiattiwut Prasertsuk, Yuhuai Liu, Ryuji Katayama, Takashi Matsuoka, Takeshi Kimura, " Phase Diagram on Phase Purity of InN grown Pressurized-Reactor MOVPE ", 9th International Conference on Nitride Semiconductors, PD.3.17, Glasgow, UK, July 10-15, 2011.
  8. Invited: Yuhuai Liu, Yuantao Zhang, Takeshi Kimura, Kiattiwut Prasertsuk, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka, "MOVPE growth of InN: dilemmas and strategies", International Workshop on Bulk Nitride Semiconductors VII, (Koyasan, Japan, March 15-20, 2011).
  9. Invited: Takashi Matsuoka and Yuhuai Liu, "Nitride Semiconductors: Planet Conscious Materials", Intern. Conf. Emerging Technology in Renewable Energy (ICETRE-2010), (Chennai, India, Aug. 18-21, 2010).
  10. Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Kiattiwut Prasertsuk, Takashi Hanada, Ryuji Katayama, Takashi Matsuoka, "Temperature Dependence of Bandgap Energy of InN Grown by Pressurized Reactor MOVPE", The 6thInternational Workshop on Nitride semiconductors (IWN2010), CP1.28 (Tampa, USA, Sept.17-25, 2010).
  11. Takeshi Kimura, Yuhuai Liu, Yuantao Zhang, Kiattiwut Prasertsuk, Jung Gon Kim, Noriyuki Hasuike,Hiroshi Harima,Ryuji Katayama, Takashi Matsuoka, "Growth Temperature Dependence of Phase Purity in InN Grown by Pressurized MOVPE", The 6th International Workshop on Nitride semiconductors (IWN2010), AP1.49 (Tampa, USA, Sept.17-25, 2010).
  12. Yuantao Zhang, Yuhuai Liu, Takeshi Kimura, Masaki Hirata, Kiattiwut Prasertusk, Ryuji Katayama, and Takashi Matsuoka, "Step-Flow Growth of InN by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy", The 6th International Workshop on Nitride semiconductors (IWN2010), AP1.21 (Tampa, USA, Sept.17-25, 2010).
  13. Shintaro Miyazawa, Satoru Ichikawa, Yuhuai Liu, Shiyang Ji, Takashi Matsuoka and Hideo Nakae, "Novel Substrate LaBGeO5 Lattice-matching to InN", Intern. Symp. Gallium Nitride (ISGN-3), (Montpellier, July 4-8, 2010).
  14. Takashi Matsuoka, Shintaro Miyazawa, Satoru Ichikawa, Yuhuai Liu, Takashi Hanada, and Ryuji Katayama, "Possibility of Novel Substrate LaBGeO5 Lattice-Matching to InN", Intern. Symp. Gallium Nitride (ISGN-3), (Montpellier, July 4-8, 2010).
  15. Invited: Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Masaki Hirata, Kiattiwut Prasertusk, Ryuji Katayama, and Takashi Matsuoka, "Extended Growth Windows for Single Crystalline InN Grown by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy", The 37th International Symposium on Compound Semiconductors, FrD1-2 (Takamatsu, Japan, May 31- June 4, 2010).
  16. Takeshi Kimura, Yuhuai Liu, Yuantao Zhang, Masaki Hirata, Kiattiwut Prasertusk, Ryuji Katayama, and Takashi Matsuoka, "The electrical properties of InN grown by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy ", The 37th International Symposium on Compound Semiconductors, FrP69 (Takamatsu, Japan, May 31 - June 4, 2010).
  17. Yuantao Zhang, Yuhuai Liu Takeshi Kimura, Masaki Hirata, Kiattiwut Prasertusk, Ryuji Katayama, and Takashi Matsuoka, " Effect of Growth Temperature on Structure Properties of InN Grown by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy ", The 37th International Symposium on Compound Semiconductors, FrP68 (Takamatsu, Japan, May 31 - June 4, 2010).
  18. Takashi Hanada, Taka-aki Shimada, Shi-Yang Ji, Kenji Hobo, Yuhuai Liu, and Takashi Matsuoka , "Strain relaxation mechanism of InGaN thin film grown on m-GaN", The 37th International Symposium on Compound Semiconductors, FrP71(Takamatsu, Japan, May 31 - June 4, 2010).
  19. Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Masaki Hirata, Kiattiwut Prasertusk, Ryuji Katayama, and Takashi Matsuoka, "Growth of InN by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy (1) ~ The Growth Mechanisms ~", 5th International Symposium on Medical, Bio- and Nano-Electronics, (Sendai, Feb. 24-25, 2010).
  20. Takeshi Kimura, Yuhuai Liu, Yuantao Zhang, Masaki Hirata, Kiattiwut Prasertusk, Ryuji Katayama, and Takashi Matsuoka, "Growth of InN by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy (2) ~ Towards the Dense Films under High-Temperature Growth ~", 5th International Symposium on Medical, Bio- and Nano-Electronics, (Sendai, Feb. 24-25, 2010).
  21. Yuantao Zhang, Yuhuai Liu, Takeshi Kimura, Masaki Hirata, Kiattiwut Prasertusk, Ryuji Katayama, and Takashi Matsuoka, "Growth of InN by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy (3) ~ Temperature Dependence on Structure Properties ~", 5th International Symposium on Medical, Bio- and Nano-Electronics, (Sendai, Feb. 24-25, 2010).
  22. Masaki Hirata, Yuhuai Liu, Yuantao Zhang, Takeshi Kimura, Kiattiwut Prasertusk, Ryuji Katayama, and Takashi Matsuoka, "Growth of InN by Pressurized-Reactor Metalorganic Vapor Phase Epitaxy (4) ~ Optical and Electrical Properties ~", 5th International Symposium on Medical, Bio- and Nano-Electronics, (Sendai, Feb. 24-25, 2010).
  23. Shiyang Ji, V. Suresh Kumar, Yuhuai Liu, Yuantao Zhang, Takeshi Kimura, Kenji Hobo, and Takashi Matsuoka, "Progresses in GaN Growth on ZnO Substrate", 5th International Symposium on Medical, Bio- and Nano-Electronics, (Sendai, Feb. 24-25, 2010).
  24. V. Suresh Kumar, Shiyang Ji, Kenji Hobo, Yuhuai Liu, Hirofumi Shindo, and Takashi Matsuoka, "Influence of V/III ratio on surface morphologies and optical properties of MOVPE-grown InGaN epitaxial layers", 5th International Symposium on Medical, Bio- and Nano-Electronics, (Sendai, Feb. 24-25, 2010).
  25. Invited: Yuhuai Liu, Yuantao Zhang, Takeshi Kimura, Masaki Hirata, Shiyang Ji, Takashi Matsuoka, "The Mechanisms of Growth of InN by Pressurized Reactor MOVPE", Asian Core Workshop on Wide band gap Semiconductors, (Cheju, Korea, September 24-25, 2009).
  26. Shiyang Ji, Yuhuai Liu, Yuantao Zhang, Takeshi Kimura, Masaki Hirata, Takashi Matsuoka, "Growth of GaN on ZnO Substrate by MOVPE", Asian Core Workshop on Wide band gap Semiconductors, (Cheju, Korea, September 24-25, 2009).
  27. Yuhuai Liu, Yuantao Zhang, Takeshi Kimura, Masaki Hirata, Shiyang Ji, Takashi Matsuoka, "Growth of InN by Pressurized Reactor MOVPE: Morphology Evolution", The 8th International Conference on Nitride Semiconductors, (Cheju, Korea, September 18-23, 2009).
  28. Shiyang Ji, Yuhuai Liu, Yuantao Zhang, Takeshi Kimura, Takashi Matsuoka, " Growth of InGaN on ZnO Substrate by MOVPE", The 8th International Conference on Nitride Semiconductors, (Cheju, Korea, September 18-23, 2009).
  29. Invited: Yuhuai Liu, Yuantao Zhang, Takeshi Kimura, Masaki Hirata, Masashi Nakao, Shiyang Ji and Takashi Matsuoka,"Challenges, Strategies, and Future Perspectives in MOVPE growth of InN", 2009 Asian Core Workshop on Wide Bandgap Semiconductors, Matsushima, Miyagi, Japan, September 4-5, 2009.
  30. Invited: Yuhuai Liu, Yuantao Zhang, Takeshi Kimura, Masaki Hirata, Shiyang Ji, Takashi Matsuoka, "Perspective in Growth of High-quality InN by Pressurized Reactor MOVPE", International Workshop on Bulk Nitride Semiconductors VI, (Galindia, Poland, August 23-28, 2009).
  31. Yuhuai Liu, Yuantao Zhang, Takeshi Kimura, Yuichi Ohta, Masaki Hirata, Shiyang Ji, Takashi Matsuoka, "Effect of Reactor Geometry on Epitaxial Growth of InN ~InN: A Novel Semiconductor for Laser Material~", 3rd International Symposium on Medical, Bio- and Nano-Electronics, P-38 (Sendai, Japan, March 5-6, 2009).
  32. Takeshi Kimura, Yuichi Ohta, Masaki Hirata, Yuantao Zhang, Yuhuai Liu, Takashi Matsuoka, "High Pressure MOVPE Growth of InN", 3rd International Symposium on Medical, Bio- and Nano-Electronics, P-39 (Sendai, Japan, March 5-6, 2009).
  33. Yuantao Zhang, Yuhuai Liu, Masaki Hirata, Takeshi Kimura, Yuichi Ohta, Shiyang Ji, Takashi Matsuoka, "Structural Properties of InN Grown by High-Pressure MOVPE", 3rd International Symposium on Medical, Bio- and Nano-Electronics, P-40 (Sendai, Japan, March 5-6, 2009).
  34. Masaki Hirata, Yuhuai Liu, Yuantao Zhang, Takeshi Kimura, Yuichi Ohta, Shiyang Ji, Takashi Matsuoka, "Optical Properties of InN Grown under High-Pressure", 3rd International Symposium on Medical, Bio- and Nano-Electronics, P-41 (Sendai, Japan, March 5-6, 2009).
  35. Shiyang Ji, Kenji Hobo, Yuhuai Liu, Yuantao Zhang, Masaki Wakaba, Takeshi Kimura, V. Suresh Kumar, Takashi Hanada, Takashi Matsuoka, "Epitaxial Growth of GaN Film on ZnO Substrate", 3rd International Symposium on Medical, Bio- and Nano-Electronics, P-42 (Sendai, Japan, March 5-6, 2009).
  36. Takeshi Kimura, Yuhuai Liu, Takaaki Shimada, Masaki Hirata, Masaki Wakaba, Masashi Nakao, Shiyang Ji, and Takashi Matsuoka, "The Way to the Growth of High Quality InN", Asian Core Workshop on Wide band gap Semiconductors, 8, (Seoul, Korea, Oct.22-23, 2008).
  37. Masashi Nakao, Takeshi Kimura, Yuhuai Liu, Shiyang Ji, and Takashi Matsuoka, "Grating Fabrication on Nitrides Grown by MOVPE for DFB Lasers", 5th Intern. Workshop on Nitrides (IWN 2008), Tu6-P29 (Montreux, Switzerland, Oct. 5-10).
  38. Yuhuai Liu, Takeshi Kimura, Taka-Aki Shimada, Masaki Hirata, Masashi Nakao, Shi-Yang Ji, and Takashi Matsuoka, "MOVPE Growth of InN: A Comparison between a Horizontal and a Vertical Reactor", The 5th International Workshop on Nitride Semiconductors, Mo2a-P7, Montreux, Switzerland, Oct.5-10, 2008.
  39. Yu-Huai Liu, Hung Hung, Hideto Miyake, Kazumasa Hiramatsu, Atsushi Nakamura, Nobuyoshi Nambu, "Synthesis of GaN powders via thermal decomposition of gallium EDTA complexes in ammonia ", 3rd International Symposium on Medical, Bio- and Nano-Electronics, P-06,(Sendai, Japan, March 5, 2008).
  40. Yu-Huai Liu, Shinya Koide, Hideto Miyake, Kazumasa Hiramatsu, Atsushi Nakamura, Nobuyoshi Nambu, "Thermal analysis of GaN powder formation via reaction of gallium ethylenediamine tetraacetic acid complexes with ammonia", The 7th International Conference on Nitride Semiconductors, Las Vegas, USA, Sept.16-21, 2007.
  41. Yu-Huai Liu, Shinya Koide, Hideto Miyake,Kazumasa Hiramatsu, Atsushi Nakamura, Nobuyoshi Nambu, "Synthesis of III-nitride microcrystals using metal-EDTA complexes", The 4th International Workshop on Nitride Semiconductors, MoP1-46, Kyoto, Japan, Oct.22-27, 2006.
  42. Kenji Tsujisawa, S. Kishino, Y. Liu, H. Miyake, K. Hiramatsu, T. Shibata, M. Tanaka, "High temperature growth of AlN film by LP-HVPE", The 4th International Workshop on Nitride Semiconductors, TuP1-78, Kyoto area, Japan, Oct.22-27, 2006.
  43. Keisuke Nakao, Da-Bing Li, Yu-Huai Liu, Hideto Miyake, Kazumasa Hiramatsu, "Dependence of In mole fraction in InGaN on GaN facets", The 4th International Workshop on Nitride Semiconductors, TuP1-65, Kyoto area, Japan, Oct.22-27, 2006.
  44. Takuya Katsuno, Yuhuai Liu, Dabing Li, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, Mitsuhiro Tanaka, "Properties of Si-doped AlGaN with high Al mole fraction", International COE Workshop on Nano Processes and Devices, and Their Applications, December 15-16, 2005, Nagoya University, Nagoya, Japan.
  45. Yu-Huai Liu, Tomoaki Tanabe, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata and Mutsuhiro Tanaka, "Fabrication of thick AlN film by low pressure hydride vapor phase epitaxy", The 6th international conference on nitride and semiconductors, Bremen, Germany, Aug. 8- Sept. 2, 2005.
  46. Takuya Katsuno, Yuhuai Liu, Dabing Li, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, Mitsuhiro Tanaka, "n-type conductivity control of AlGaN with high Al mole fraction", The 6th international conference on nitride and semiconductors, Bremen, Germany, Aug. 8- Sept. 2, 2005.
  47. Da-Bing Li, Yu-Huai Liu, Takuya Katsuno, Keisuke Nakao, Kazuya Nakamura, Masakazu Aoki, Hideto Miyake, Kazumasa Hiramatsu, "Enhanced emission efficiency of InGaN films with Si doping", The 6th international conference on nitride and semiconductors, Bremen, Germany, Aug. 8- Sept. 2, 2005.
  48. Akira Ishiga, Takashi Onishi, Yuhuai Liu, Masaya Haraguchi, Noriyuki Kuwano, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, and Mitsuhiro Tanaka, "Reduction of dislocation density in AlGaN with high AlN molar fraction by using a rugged AlN epilayer", Material Research Society Fall Meeting, Boston, MA, USA, Nov.29-Dec.3, 2004.
  49. Yuhuai Liu, Akira Ishiga, Takashi Onishi, Hideto Miyake, Kazumasa Hiramatsu, Tomohiko Shibata, and Mitsuhiro Tanaka, "High quality AlGaN/AlN superlattices grown on AlN/sapphire template by MOVPE", The 31st international symposium on compound semiconductors, Seoul, Korea, Sept. 12-16. 2004.
  50. Hideto Miyake, Akira Ishiga, Takashi Onishi, Yuhuai Liu, Tomohiko Shibata, Mitsuhiro Tanaka and Kazumasa Hiramatsu, "Reduction of dislocation density in AlGaN by using facet-control technique", 12th International Conference on Metal Organic Vapor Phase Epitaxy (ICMOVPE-VII), May 30- Jun. 4, 2004, Maui, Hawaii, USA.
  51. Hideto Miyake, Akira Ishiga, M. Suda, Takashi Ohnishi, Yuhuai Liu, Naoaki Umeda, Tomohiko Shibata, and Kazumasa Hiramatsu, "Reduction of dislocation density in AlGaN by using incline-grooved AlN epilayer", The 5th International Symposium on Blue Laser and Light Emitting Diodes, Korea, March, 2004.
  52. Jin-Ping Ao, Kubota Naotaka, Wang Hong-Xing, Liu Yu-Huai, Yoshiki Naoi, Kikuta Daigo, Shiro Sakai and Yasuo Ohno, "Investigation of Copper Schottky Contact on n-GaN Grown on Sapphire Substrate", Proceeding of First Asia-Pacific Workshop on Widegap Semiconductors, pp.258-259, Awajishima, March 2003.
  53. Tao Wang, Yuhuai Liu, YongBae Lee, Yuji Izumi, Jinping Ao, Hongdong Li, Jie Bai, Shiro Sakai, "Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes", The Thirteenth International Conference on Crystal Growth in Conjunction with The Eleventh International Conference on Vapor Growth and Epitaxy, July 30-August 4, 2001, Kyoto, Japan.
  54. Tao Wang, Yuhuai Liu, YongBae Lee, Yuji Izumi, Hongdong Li, Jie Bai, and Shiro Sakai, "A high output power AlGaN/GaN-based ultra-violet light-emitting diode with a 350nm emission wavelength", The Fourth International Conference on Nitride Semiconductors, July 16-20, 2001, Denver, Colorado, USA.

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Committee Activities