教員詳細

写真

未来材料・システム研究所 附属未来エレクトロニクス集積研究センター

金 胄男(キム ジュウナン), 研究員, 1980年生

KIM Joonam

E-Mailアドレス

kimjnam*@*imass.nagoya-u.ac.jp(メール送信の際は@前後の*を削除してください)

kimjnam*@*gmail.com(メール送信の際は@前後の*を削除してください)

学歴

学内兼務職

取得学位

工学 修士, ソウル市立大学 韓国

工学 博士, 北陸先端科学技術大学院大学 日本

研究分野を表すキーワード

2D材料,カボン材料,半導体素子,強誘電体

専門分野

半導体材料・素子

学術論文等

  1. Investigation of Nb-Zr-O thin film using sol-gel coating, Joonam Kim, Ken-ichi Haga and Eisuke Tokumitsu, Journal of semiconductor technology and science, vol.17,pp.1598, 2017
  2. Fabrication of MoS2 thin films on oxide-dielectric-covered substrates by chemical solution process Joonam Kim, Koichi Higashimine, Ken-ichi Haga and Eisuke Tokumitsu, Physica status solidi (b), vol.254, pp.1600536, 2017
  3. Improvement of Sol–Gel Derived PbZrxTixO3 Film Properties Using Thermal Press Treatment Toshihiko Kaneda, Joo-Nam Kim, Eisuke Tokumitsu, and Tatsuya Shimoda, Japanese Journal of Applied Physics , vol.49, pp.09MA08, 2010
  4. Fabrication and Characterization of MFIS-FET Using Au/BLT/LZO/Si Structures , Ho-Seung Jeon, Gwang-geun Lee, Jeong-Hwan Kim, Joonam Kim, Yun-Soo Choi and Byung-Eun Park, Ferroelectrics, vol. 368, pp. 81, 2010
  5. Fabrication and characterization of Au/SBT/LZO/Si MFIS structure Jong Hyun Im, Ho Seung Jeon, Joo-Nam Kim, Jeong Hwan Kim, Gwang Geun Lee, Byung Eun Park, and Chul Ju Kim, Journal of Electroceramics, vol.23, pp.284, 2009
  6. (Bi,La)4Ti3O12 as a ferroelectric layer and SrTa2O6 as a buffer layer for metal-ferroelectric-metal-insulator-semiconductor field-effect transistor, Joo-Nam KIM, Yun-Soo CHOI and Byung-Eun PARK, Japan Ceramic Society, vol.117, pp.1032, 2009
  7. Ferroelectric properties of SrBi2Ta2O9 thin films on Si (100) with a LaZrOx buffer layer, Jong Hyun Im, Ho Seung Jeon, Joo-Nam Kim, Dong Won Kim, Byung Eun Park, and Chul Ju Kim, Journal of Electroceramics, vol.22, pp.276 (2009).
  8. Effect of Thickness on Electrical Properties of PVDF-TrFE (51/49) Copolymer, Joo-Nam Kim, Ho-Seung Jeon, Hui-Seong Han, Jong-Hyun Im, Byung-Eun Park and Chul-Ju Kim, Journal of the Korean Institute of Electrical and Electronic Material Engineers, vol. 21, pp. 881, 2008
  9. Characterization of Metal-Ferroelectric-Semiconductor Structure Using Ferroelectric Polymer Polyvinylidene Fluoride-Trifluoroethylene (PVDF-TrFE) (51/49), Dong Won Kim, Jeong Hwan Kim, Joo-Nam Kim, Hyung Jin Park, Ho Seung Jeon, and Byung Eun Park, Integrated Ferroelectrics, vol.98, pp.121, 2008.
  10. Sol-Gel Deposited LaZrOx Buffer Layer for Ferroelectric Thin Film, Ho-Seung Jeon, Jeong-Hwan Kim, Joo-Nam Kim, Jong-Hyun Im, Byung-Eun Park and Chul-Ju Kim, Journal of the Korean Physical Society, vol.51, pp.S100, 2007
  11. Electrical Properties of Metal-Ferroelectric-Semiconductor Structures Based on Ferroelectric Polyvinylidene Fluoride (PVDF), Jeong-Hwan Kim, Joonam Kim and Byung-Eun Park, Journal of Korean Physical Society, vol.51, pp.723, 2007

研究発表等

  1. 溶液プロセスによるMoS2の作製と薄膜トランジスタ応用に関する研究, Joonam Kim, Ken-ichi Haga and Eisuke Tokumitsu, 第64回応用物理学会 春季学術講演会, Oral, 2017.
  2. Investigation of Nb-Zr-O thin film using sol-gel coating, Joonam Kim, Ken-ichi Haga, Eisuke Tokumitsu, 2016 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2016), Oral, 2016.
  3. Fabrication of MoS2 thin films on oxide-dielectric-covered substrates by solution process, Joonam Kim, Eisuke Tokumitsu, Compound Semiconductor Week 2016 (CSW2016), Poster, 2016.
  4. Investigation of solution processed MoS2 on high-k oxide film, Joonam Kim, Ken-ichi Haga and Eisuke Tokumitsu, 平成28年度(2016年) 応用物理学会 北陸・信越支部 学術講演会, Oral, 2016.
  5. Chemical solution processed MoS2 on high-k oxide film, Joonam Kim, Koichi Higashimine, Ken-ichi Haga and Eisuke Tokumitsu, 第77回応用物理学会秋季学術講演会, Oral, 2016.
  6. Characterization of sol-gel derived Nb doped ZrO2 thin film, Joonam Kim, Eisuke Tokumitsu, 第63回応用物理学会春季学術講演会, Poster, 2016.
  7. Characterization of niobium doped ZrO2 for gate dielectric material, Joonam Kim, Eisuke Tokumitsu, IISc-JAIST Joint workshop on Functional Inorganic and Organic Material, Poster, 2016.
  8. Characterization of solution processed thin film MoS2 on oxide dielectric, Joonam Kim, Eisuke Tokumitsu, The 5th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-Nano 2015), Poster, 2015.
  9. Leakage current propery of the PZT films improved by thermal press treatment, Joo-Nam Kim, Toshihiko Kaneda, Eisuke Tokumitsu, Tatsuya Shimoda, the 10th international conference on Nanoimprint and Nanoprint Technology, Oral, 2011.
  10. Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor Field-Effect Transistor Using (Bi,La)4Ti3O12 and SrTa2O6 Buffer Layer, Joo Nam Kim, Ho Seung Jeon, Hyung Jin Park, and Byung Eun Park, 20th International Symposium of Integrated Ferroelectrics, Poster, 2008.
  11. Electrical Properties of Au/(Bi,La)4Ti3O12/Pt/SrTa2O6/Si Field-Effect Transistor, Joo Nam Kim, Ho Seung Jeon, and Byung Eun Park, The 6th Asian Meeting on Ferroelectrics, Poster, 2008.
  12. Electrical Properties of Hybrid PVDF-TrFE(75/25)/PZT”, KJC-FE07, The 7th Korea-Japan Conference on Ferroelectricity, Joo Nam Kim, Gwang Geun Lee, Shin Woo Jeong, Ho Seung Jeon, and Byung Eun Park, Poster, 2008.
  13. Characterization of Metal-ferroelectric-metal-insulator-semiconductor Field-Effect Transistor Using (Bi,La)4Ti2O3 and SrTa2O4 Buffer Layer, Joo-Nam Kim, Byung-Eun Park, The International Conference on Electrical Engineering 2008, Poster, 2008.
  14. Fabrication and Characterization of Metal-Ferroelectric-Metal-Insulator-Semiconductor Field-Effect Transistor Using (Bi,La)4Ti3O12 and SrTa2O6, Joo Nam Kim, Ho Seung Jeon, and Byung Eun Park, the KPS Annual Spring Conference 2008, Oral, 2008.
  15. Investigated the Thickness Effect of the PVDF-TrFE Film for Low Voltage Operating Nonvolatile Memory in Flexible Mobile Device, Joo Nam Kim, Hui Seong Han, Ho Seung Jeon, and Byung Eun Park, The 9th Seoul-Shanghai Forum(International workshop on Urban Environmental Science and Technology, Poster, 2007.
  16. One-transistor-type ferroelectric memory using (Bi,La)4Ti3O12/LaZrOx/Si structures for the nonvolatile memory devices, Joo Nam Kim, Ho Seung Jeon, Gwang Geun Lee, and Byung Eun Park, The 9th Seoul-Shanghai Forum(International workshop on Urban Environmental Science and Technology, Poster, 2007.
  17. Characterization of Metal-ferroelectric-semiconductor Structure using Ferroelectric Polymer PVDF-TrFE Film, Dong Won Kim, Jeong Hwan Kim, Joo Nam Kim, Ho Seung Jeon, and Byung Eun Park, 24th Japan-Korea International Seminar on Ceramics, 2007.
  18. Thickness Effects on Electrical Protperties of PVDF-TrFE(51/49) Copolymer for Ferroelectric Thin Film Transistor, Joo Nam Kim, Ho Seung Jeon, Hui Seong Han, Jong Hyun Im, Byung Eun Park, and Chul Ju Kim, KIEEME Annual Autumn Conference 2007, Poster, 2007.

所属学会等

教員からの一言

私の研究テーマは超薄膜を用いた流体発電に関する研究です。ナノ材料を用いて新たな研究をすることに興味ふかいです。