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未来材料・システム研究所 附属未来エレクトロニクス集積研究センター

加藤 正史 (カトウ マサシ), 客員准教授, 1975年生

KATO, Masashi

(名古屋工業大学大学院 工学研究科 准教授)

E-Mailアドレス

kato.masashi*@*nitech.ac.jp(メール送信の際は@前後の*を削除してください)

個人用ホームページURL

http://ik-lab.web.nitech.ac.jp/mkato/

学歴

職歴

取得学位

研究分野を表すキーワード

半導体評価, パワーデバイス, 人工光合成, 集積回路

専門分野

科学研究費補助金

競争的資金等(科研費以外)

それ以外の外部資金実績

著書等

  1. 「薄膜の評価技術ハンドブック」 “第2章第4節第4項 DLTS法” 加藤 正史、株式会社テクノシステム(2013.1.29)
  2. 「SiCパワーデバイスの開発と最新動向 -普及に向けたデバイスプロセスと実装技術-」 第3章第4節 “陽極酸化欠陥抑制法によるn型4H-SiCのショットキーダイオードの整流特性改善”、加藤 正史、S&T出版、ISBN 978-4-907002-06-0 pp.159-169. (2012.10)
  3. 「SiCパワーデバイス最新技術 =次世代パワーエレクトロニクス=」 第12章.“SiCへの金属電極の形成方法”、加藤 正史、サイエンス&テクノロジー株式会社、ISBN 978-4-903413-84-6 pp.159-168 (2010.5)

学術論文等(査読付き)

  1. “The enhanced performance of 3C-SiC photocathodes for the generation of hydrogen through the use of cocatalysts” Naoto Ichikawa, Masashi Kato, and Masaya Ichimura, Applied Physics Letters 109, 153904 (2016); doi: 10.1063/1.4964825
  2. “Degradation of a sintered Cu nanoparticle layer studied by synchrotron radiation computed laminography” Masanori Usui, Hidehiko Kimura, Toshikazu Satoh, Takashi Asada, Satoshi Yamaguchi, Masashi Kato, Microelectronics Reliability 63, 152–158 (2016). http://dx.doi.org/10.1016/j.microrel.2016.06.011
  3. “Improved performance of InGaN/GaN multilayer solar cells with an atomic-layer-deposited Al2O3 passivation film” M. Miyoshi, T. Kabata, T. Tsutsumi, T. Mori, M. Kato, T. Egawa, Electronics Letters 52, 1246–1248 (2016). http://dx.doi.org/10.1049/el.2016.1574
  4. “Development of a microwave photoconductance measurement technique for study of carrier dynamics in highly-excited 4H-SiC” Subacius Liudvikas, Jarasiunas Kestutis, Ščajev Patrik, Kato Masashi, Measurement Science and Technology 26 (2015) 125014. http://dx.doi.org/10.1088/0957-0233/26/12/125014
  5. “Carrier lifetime measurements on various crystal faces of rutile TiO2 single crystals” Masashi Kato, Kimihiro Kohama, Yoshihito Ichikawa, and Masaya Ichimura, Materials Letters 160 (2015) 397–399 http://dx.doi.org/10.1016/j.matlet.2015.08.018
  6. “Spectral response, carrier lifetime, and photocurrents of SiC photocathodes” Masashi Kato, Keiko Miyake, Tomonari Yasuda, Masaya Ichimura, Tomoaki Hatayama, and Takeshi Ohshima, Japanese Journal of Applied Physics 55, 01AC02 (2016). http://dx.doi.org/10.7567/JJAP.55.01AC02
  7. “Photocathode for hydrogen generation using 3C-SiC epilayer grown on vicinal off-angle 4H-SiC substrate” Naoto Ichikawa, Masashi Kato, and Masaya Ichimura, Applied Physics Express 8, 091301 (2015). http://dx.doi.org/10.7567/APEX.8.091301
  8. “Microwave reflectivity from 4H-SiC under a high-injection condition: impacts of electron – hole scattering” Masashi Kato, Yuto Mori, and Masaya Ichimura, Japanese Journal of Applied Physics 54, 04DP14 (2015) http://dx.doi.org/10.7567/JJAP.54.04DP14
  9. “Howling Reduction by Analog Phase-Locked Loop and Active Noise Control Circuits” Manami Kubo, Junki Taniguchi, Masashi Kato, Applied Acoustics 87C (2015) pp. 174-182.
  10. "Surface recombination velocities for n-type 4H-SiC treated by various processes" Yuto Mori, Masashi Kato, Masaya Ichimura, Journal of Physics D: Applied Physics 47 (2014) 335102 (5pp) http://dx.doi.org/10.1088/0022-3727/47/33/335102
  11. “Epitaxial p-type SiC as a self-driven photocathode for water splitting” Masashi Kato, Tomonari Yasuda, Keiko Miyake, Masaya Ichimura, Tomoaki Hatayama, International Journal of Hydrogen Energy 39 (2014) 4845-4849 http://dx.doi.org/10.1016/j.ijhydene.2014.01.049
  12. “Observation of deep levels and their hole capture behavior in p-type 4H-SiC epilayers with and without electron irradiation” Masashi Kato, Kazuki Yoshihara, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima, Japanese Journal of Applied Physics 53 (2014) 04EP09.
  13. “Efficiency of a solar cell with intermediate energy levels: an example study on hydrogen implanted Si solar cells” Masaya Ichimura, Hiromu Sakakibara, Koji Wada and Masashi Kato, Journal of Applied Physics, 114, 114505 (2013).
  14. “Excess carrier lifetime and strain distributions in a 3C-SiC wafer grown on an undulant Si substrate”, Masashi Kato, Atsushi Yoshida, Masaya Ichimura, Hiroyuki Nagasawa, Physica Status Solidi (a) Vol. 210 (2013) No. 9 pp.1719-1725
  15. “Performance improvement of the analog ANC circuit for a duct by insertion of an all-pass filter” T. Hyodo, G. Asakura, K. Tsukada, and M. Kato, IEICE TRANSACTIONS on Fundamentals of Electronics, Communications and Computer Sciences Vol.E96-A No.4 (2013) pp.824-825
  16. “Leakage Current Suppression Using Passivation of Defect by Anodic Oxidation for 4H-SiC Schottky Contacts” Masashi Kato, Masaya Kimura, and Masaya Ichimura, Japanese Journal of Applied Physics, 52 (2013) 04CP02.
  17. "SiC photoelectrodes for a self-driven water-splitting cell" T. Yasuda, M. Kato, M. Ichimura, T. Hatayama, Applied Physics Letters, 101, pp.053902-1-3 (2012)
  18. ” アンケート調査に基づく高校生を対象とした啓発活動に関する一検討” 平田晃正、加藤正史、江龍修、丸田章博, 電気学会論文誌A 基礎・材料・共通部門誌 Vol. 132(2012) No. 12 pp.1124-1125.
  19. “卒業研究記録ノートの導入による卒業研究実施状況および達成度の把握” 加藤正史、江龍修、大原繁男, 電気学会論文誌A 基礎・材料・共通部門誌 Vol. 132(2012) No. 12 pp.1122-1123.
  20. “構築型スライドの事前提供と学生指名によるインタラクティブ授業の試み” 加藤正史,電気学会論文誌A 基礎・材料・共通部門誌 Vol. 132(2012) No. 12 pp.1120-1121.
  21. “Excess Carrier Lifetime in p-Type 4H-SiC Epilayers with and without Low-Energy Electron Irradiation” Masashi Kato, Yoshinori Matsushita, Masaya Ichimura, Tomoaki Hatayama, and Takeshi Ohshima, Japanese Journal of Applied Physics, Vol. 51 (2012) 028006-1-2
  22. “Estimation of the Surface Recombination Velocity from Thickness Dependence of the Carrier Lifetime in n-type 4H-SiC Epilayers” Masashi Kato, Atsushi Yoshida, Masaya Ichimura, Japanese Journal of Applied Physics, Vol. 51 (2012) 02BP12-1-6
  23. “A diffraction-based technique for determination of interband absorption coefficients in bulk 3C-, 4H- and 6H-SiC crystals” Patrik Scajev, Masashi Kato, and Kestutis Jarasiunas, J. Phys. D: Appl. Phys. 44 (2011) 365402-1-8
  24. “Active Noise Control in a Duct by an Analog Neural Network Circuit” Masashi Kato, Applied Acoustics, Vol.72 No.10 pp.732-736 (2011)
  25. “Observation of Defects that Reduce Schottky Barrier Height in 4H-SiC Schottky ContactsUsing Electrochemical Deposition of ZnO” Masashi Kato, Hidenori Ono, Masaya Ichimura, Gan Feng, and Tsunenobu Kimoto, Japanese Journal of Applied Physics Vol. 50, No. 3, 036603-1-4 (2011).
  26. “電気電子工学系大学生の入学動機の時系列変化および大学間における相違の調査” 加藤正史、平田晃正、大原繁男、江龍修、丸田章博, 電気学会論文誌A 基礎・材料・共通部門誌 Vol. 131, No.8, pp.635-636 (2011)
  27. “Comparative studies of carrier dynamics in 3C-SiC layers grown on Si and 4H-SiC substrates”P. Ščajev, J. Hassan, K. Jarašiūnas, M. Kato, A. Henry, and J. P. Bergman, Journal of Electronic Materials, Vol. 40 No. 4 (2011) 394-399.
  28. "Deep Levels Affecting the Resistivity in Semi-Insulating 6H-SiC" M. Kato, K. Kito and M. Ichimura, Journal of Applied Physics, 108, 053718-1-5 (2010)
  29. “学習・教育目標を利用した要素別GPA分析による学修指導の試み“ 大原繁男、森田良文、平田晃正、加藤正史、江龍修, 電気学会論文誌A 基礎・材料・共通部門誌 Vol.130 No.1 (2010) p.123-124.
  30. “Excess carrier recombination lifetime of bulk n-type 3C-SiC” Vytautas Grivickas, Georgios Manolis, Karolis Gulbinas, Kestutis Jarašiūnas, and Masashi Kato, APPLIED PHYSICS LETTERS 95, p.242110-1-3, 2009
  31. “Annealing Study of the electrochemically Deposited InSxOy Thin Film and Its Photovoltaic Application” Ashraf M. Abdel HALEEM, Masashi KATO and Masaya ICHIMURA, IEICE TRANS. ELECTRON., Vol. E92-C, No.12, pp. 1464-1469, Dec. 2009.
  32. “Characterization of plasma etching damage on p-type GaN using Schottky diodes” Masashi Kato, Kazuki Mikamo, Masaya Ichimura, Masakazu Kanechika ,Osamu Ishiguro, Tetsu Kachi, Journal of Applied Physics, Vol. 103 (2008 May) 093701-1-5
  33. “Low-Power Switched Current Memory Cell with CMOS-type Configuration” Masashi KATO, Nobuyuki TERADA, Hirofumi OHATA, and Eisuke ARAI, IEICE TRANS. ELECTRON., Vol. E91-C, No.1, pp. 120-121, Jan. 2008.
  34. “Observation of Inhomogeneity of Schottky Barrier Height on 4H-SiC Using the Electrochemical Deposition” Masashi Kato, Kazuya Ogawa and Masaya Ichimura, Japanese Journal of Applied Physics 46 (2007) pp. L997–L999.
  35. “Excess Carrier Lifetime in a Bulk p-type 4H-SiC Wafer Measured by the Microwave Photoconductivity Decay Method” Masashi Kato, Masahiko Kawai, Tatsuhiro Mori, Masaya Ichimura, Shingo Sumie, and Hidehisa Hashizume, Japanese Journal of Applied Physics, 46(2007) pp. 5057-5061.
  36. “Excess Carrier Lifetime Measurement for Plasma-Etched GaN by the Microwave Photoconductivity Decay Method” Hideki Watanabe, Masashi Kato, Masaya Ichimura, Eisuke Arai, Masakazu Kanechika, Osamu Ishiguro and Tetsu Kachi, Japanese Journal of Applied Physics, 46(2007) pp. 35-39.
  37. “Optical cross sections of deep levels in 4H-SiC” M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura, T. Kimoto and R. Pässler, Journal of Applied Physics 100, (2006) 053708-1-9.
  38. “Excess Carrier Lifetime Measurement of Bulk SiC Wafers and Its Relationship with Structural Defect Distribution” Tatsuhiro Mori, Masashi Kato, Hideki Watanabe, Masaya Ichimura, Eisuke Arai, Shingo Sumie and Hidehisa Hashizume, Japanese Journal of Applied Physics, 44(2005) pp. 8333-8339.
  39. “Characterization of deep levels in 6H-SiC by optical-capacitance-transient spectroscopy”Y. Nakakura, M. Kato, M. Ichimura, E. Arai, Y. Tokuda, and S. Nishino, Journal of Applied Physics, 94(2003) pp. 3233-3238.
  40. “Electrochemical etching of 6H-SiC using aqueous KOH solutions with low surface roughness”Masashi Kato, Masaya Ichimura, Eisuke Arai and Perumalsamy Ramasamy,Japanese Journal of Applied Physics, 42(2003) pp. 4233-4236.
  41. “Etch pit observation for 6H-SiC by electrochemical etching using an aqueous KOH solution”Masashi Kato, Masaya Ichimura, Eisuke Arai and Perumalsamy Ramasamy, Journal of Electrochemical Society, 150(2003) pp. C208-211.
  42. “Deep center passivation in 3C-SiC by hydrogen plasma with a grid for damage suppression”Masashi Kato, Fumitaka Sobue, Masaya Ichimura, Eisuke Arai, Noboru Yamada, Yutaka Tokuda and Tsugunori Okumura,Solid-State Electronics, 46(2002) pp. 2099-2104.
  43. “Sacrificial Anodic Oxidation of 6H-SiC”Masashi Kato, Masaya Ichimura and Eisuke Arai, Japanese Journal of Applied Physics, 40(2001) pp. L1145-L1147.
  44. “Deep Level Study in Heteroepitaxial 3C-SiC Grown on Si by Hexamethyldisilane”Masashi Kato, Masaya Ichimura, Eisuke Arai, Yasuichi Masuda, Yi Chen, Shigehiro Nishino and Yutaka Tokuda,Japanese Journal of Applied Physics, 40(2001)pp. 4943-4947.
  45. “Passivation of Deep Levels in 3C-SiC on Si by a Hydrogen Plasma Treatment”Masashi Kato, Fumitaka Sobue, Masaya Ichimura, Eisuke Arai, Noboru Yamada, Yutaka Tokuda and Tsugunori Okumura, Japanese Journal of Applied Physics, 40(2001) pp. 2983-2986.
  46. “Search for midgap levels in 3C-SiC grown on Si substrates”Noboru Yamada, Masashi Kato, Masaya Ichimura, Eisuke Arai and Yutaka Tokuda,Japanese Journal of Applied Physics, 38(1999) pp. L1094-L1096.

学術論文等(国際会議論文)

  1. “Identification of structures of the deep levels in 4H-SiC” Hiroki Nakane, Masashi Kato, Masaya Ichimura, Takeshi Ohshima, Materials Science Forum 778-780 (2014) pp.277-280
  2. ”Impact of carrier lifetime on efficiency of photolytic hydrogen generation by p-type SiC” Keiko Miyake, Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Takeshi Ohshima, Materials Science Forum 778-780 (2014) pp.503-506
  3. “Estimation of surface recombination velocities for n-type 4H-SiC surfaces treated by various processes” Yuto Mori, Masashi Kato, Masaya Ichimura, Materials Science Forum 778-780 (2014) pp.432-435
  4. “Correlation between Microwave Reflectivity and Excess Carrier Concentrations in 4H-SiC” Masashi Kato, Yuto Mori, Masaya Ichimura, Materials Science Forum 778-780 (2014) pp.293-296
  5. “Deep levels in p-type 4H-SiC induced by low-energy electron irradiation” Kazuki YOSHIHARA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA, Takeshi OHSHIMA, Materials Science Forum Vols. 740-742 (2013) pp. 373-376.
  6. “Solar-to-hydrogen conversion efficiency of water photolysis with epitaxially grown p-type SiC” Tomonari Yasuda, Masashi Kato, Masaya Ichimura, Tomoaki Hatayama, Materials Science Forum Vols. 740-742 (2013) pp. 859-862.
  7. “Characterization of Photoelectrochemical Properties of SiC as a Water Splitting Material” Tomonari Yasuda, Masashi Kato and Masaya Ichimura, Materials Science Forum Vols. 717-720 (2012) pp.585-588.
  8. “Carrier Diffusivity in Highly Excited Bulk SiC, GaN, and Diamond Crystals by Optical Probes” K. Jarašiūnas, P. Ščajev, T. Malinauskas, M. Kato, E. Ivakin, M. Nesladek, K. Haenen, Ü. Özgür, and H. Morkoç, Materials Science Forum Vols. 717-720 (2012) pp.309-312.
  9. “Correlation between strain and excess carrier lifetime in a 3C-SiC wafer” Atsushi Yoshida, Masashi Kato, Masaya Ichimura, Materials Science Forum Vols. 717-720 (2012) pp.305-308.
  10. “On applicability of time-resolved optical techniques for characterization of differently grown 3C-SiC crystals and heterostructures” P. Ščajev, P. Onufrijevs, G. Manolis, M. Karaliūnas, S. Nargelas, N. Jegenyes, J. Lorenzzi, G. Ferro, M. Beshkova, R. Vasiliauskas, M. Syväjärvi, R. Yakimova, M. Kato, and K. Jarašiūnas, Materials Science Forum Vol. 711 (2012) pp 159-163
  11. “Electrical parameters of bulk 3C-SiC crystals determined by Hall effect, magnetoresistivity, and contactless time-resolved optical techniques” P. Ščajev, A. Mekys, P. Malinovskis, J. Storasta, M. Kato, and K. Jarašiūnas, Materials Science Forum Vols. 679-680 (2011) pp 157-160
  12. “Improvement of Schottky contact characteristics by anodic oxidation of 4H-SiC” Masaya Kimura, Masashi Kato and Masaya Ichimura, Materials Science Forum Vols. 679-680 (2011) pp 461-464
  13. “Internal Stresses in Free-Standing 3C-SiC Grown on Si and Their Relation to Carrier Lifetime” V. Grivickas, G. Manolis, K. Gulbinas, J. Linnros, M. Kato, AIP Conf. Proc. -- November 1, 2010 -- Volume 1292, pp. 91-94
  14. “Correlation between Schottky contact characteristics and regions with a low barrier height revealed by the electrochemical deposition on 4H-SiC” M. Kato, H. Ono and M. Ichimura, Materials Science Forum Vols. 645-648 (2010) pp 669-672
  15. “Nonequilibrium carrier recombination in highly excited bulk SiC crystals” K. Jarašiūnas, P. Ščajev, V. Gudelis, P. B. Klein, and M. Kato, Materials Science Forum Vols. 645-648 (2010) pp 215-218
  16. “Characterization of the excess carrier lifetime of as-grown and electron irradiated epitaxial p-type 4H-SiC layers by the microwave photoconductivity decay method” Yoshinori MATSUSHITA, Masashi KATO, Masaya ICHIMURA, Tomoaki HATAYAMA and Takeshi OHSHIMA, Materials Science Forum Vols. 645-648 (2010) pp 207-210
  17. “Characterization of Deep Levels in High-Resistive 6H-SiC by Current Deep Level Transient Spectroscopy” Masashi Kato, Kosuke Kito and Masaya Ichimura, Materials Science Forum Vols. 615-617 (2009) pp 381-384
  18. “Delineation of Defects Reducing Schottky Barrier Heights on 4H-SiC by the Electrochemical Deposition” Masashi Kato, Kazuya Ogawa and Masaya Ichimura, Materials Science Forum Vols. 600-603 (2009) pp 373-376
  19. “Observation of Regions with Low Schottky Barrier Height in 4H-SiC by the Electrochemical Deposition” Masashi Kato, Hidenori Ono, Kazuya Ogawa, Masaya Ichimura, Technical Digest of 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2008 Jul.) pp.357-361.
  20. “Characterization of plasma etching effects on p-type GaN by capacitance measurements of Schottky diodes” Masashi KATO,Kazuki MIKAMO,Masaya ICHIMURA,Masakazu KANECHIKA,Osamu ISHIGURO and Tetsu KACHI, Technical Digest of 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2007 Jun.) J-R21M pp.118-121.
  21. “Analysis of plasma etching damages in GaN by excess carrier lifetime measurements” Masashi KATO, Keisuke FUKUSHIMA, Masaya ICHIMURA, Masakazu KANECHIKA, Osamu ISHIGURO and Tetsu KACHI, Technical Digest of 2007 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (2007 Jun.) J-R20M pp.114-117.
  22. “Excess Carrier Lifetimes in a bulk p-type SiC Wafer Measured by the Microwave Photoconductivity Decay Method” Masahiko Kawai, Tatsuhiro Mori, Masashi Kato, Masaya Ichimura, Shingo Sumie, and Hidehisa Hashizume, Materials Science Forum, 556-557(2007) pp. 359-362.
  23. “Excess Carrier Lifetime Measurements for GaN onSapphire Substrates with Various Doping Concentrations and Surface Conditions by the Microwave Photoconductivity Decay Method”Masashi Kato, Hideki Watanabe, Masaya Ichimura, and Eisuke Arai, Proceedings of Materials Research Society, Volume 831(2005) pp. E3.3 107-111.
  24. “Optical-Capacitance-Transient Spectroscopy Study for Deep Levels in 4H-SiC Epilayer Grown by Cold Wall Chemical Vapor Deposition”M. Kato, S. Tanaka, M. Ichimura, E. Arai, S. Nakamura and T. Kimoto, Materials Science Forum, 483-485(2005) pp. 381-384
  25. “Excess Carrier Lifetime Mapping for Bulk SiC Wafers by Microwave Photoconductivity Decay Method and Its Relationship with Structural Defect Distribution”M. Kato, M. Ichimura, E. Arai, S. Sumie and H. Hashizume, Materials Science Forum, 457-460(2004) pp. 505-508
  26. “Electrochemical etching of n-type 6H-SiC using aqueous KOH solutions”Masashi Kato, Masaya Ichimura, Eisuke Arai and Perumalsamy Ramasamy, Materials Science Forum, 433-436(2003) pp. 665-668.
  27. “Characterization of deep levels in 3C-SiC by optical-capacitance-transient spectroscopy”Yohei Nakakura, Masashi Kato, Masaya Ichimura, Eisuke Arai and Yutaka Tokuda,Proceedings of Materials Research Society, Volume 719(2002) pp. 167-172.
  28. “Deep level study in epitaxial 4H-SiC grown on substrates inclined toward <1100>”Masashi Kato, Masaya Ichimura, Eisuke Arai and Shigehiro Nishino, Proceedings of Materials Research Society, Volume 719(2002) pp. 457-462.
  29. “Characteristics of Schottky diodes on 6H-SiC surfaces after sacrificial anodic oxidation”Masashi Kato, Masaya Ichimura and Eisuke Arai, Materials Science Forum, 389-393(2002) pp. 933-936.
  30. “DLTS study of 3C-SiC grown on Si using hexamethyldisilane”Masashi Kato, Masaya Ichimura, Eisuke Arai, Yasuichi Masuda, Yi Chen, Shigehiro Nishino and Yutaka Tokuda,Proceedings of Materials Research Society, Vol. 622(2000) pp. T-4.3.1-6.

学術論文等(総説・解説)

  1. 「半導体を用いた水素生成技術」 加藤正史、応用物理 第85巻 第2号 2016年2月
  2. 「ハウリングを高速応答のアナログ回路で除去」 加藤正史、久保真奈美、谷口淳紀,ナラサンビ アヌスヤ、日経エレクトロニクス(日経BP社)、2014年10月13日号65-71頁
  3. 「世界初!「SiCと水から水素を製造!」」 加藤正史、マテリアルステージ(技術情報協会)、2014年2月号 64-66頁
  4. 「シリコンカーバイドの太陽光吸収を利用した水素生成」 加藤正史、ケミカルエンジニヤリング(化学工業社)、58巻 10号 7-11頁、2013年10月
  5. “Electrochemical oxidation and etching of 6H-SiC” [invited]Masashi Kato, Masaya Ichimura and Eisuke Arai, Recent Research Development in Electrochemistry, 7(2004) pp. 45-70
  6. “Deep Level Characterization and its Passivation in 3C-SiC Monitored by Capacitance Transient Methods” [invited]Masashi Kato, Masaya Ichimura, Eisuke Arai and Yutaka Tokuda,Defect and Diffusion Forum, 218-220(2003) pp. 1-16.

研究発表等(招待講演のみ掲載)

  1. SPIE Optics + Photonics2016, Optical Engineering + Applications Conferences, Wide Bandgap Power Devices and Applications , 2016年8月28日“Evaluation of surface recombination of SiC for development of bipolar devices”(invited talk),Masashi Kato
  2. 第20回資源循環型ものづくりシンポジウム特別講演、名古屋市工業研究所平成27年12月2日、“シリコンカーバイドによる太陽光-水素エネルギー変換”、加藤正史
  3. UK-Japan Solar Driven Fuel Synthesis Workshop: Materials, Understanding and Reactor Design, September 18-19, 2014, British Embassy Tokyo, P-11: SILICON CARBIDE PHOTOCATHODE FOR SOLAR TO HYDROGEN CONVERSION(invited poster), Masashi Kato
  4. ASIA-PACIFIC WORKSHOP ON MATERIALS CHARACTERISATION, 2011年09月24日, Crystal Growth Centre, Anna Univesity, Chennai, India, “Characterization of deep levels in semi-insulating SiC”(invited talk), Masashi Kato
  5. Joint Workshop on Nitride Semiconductors and Devices (JWNSD 2010), 18 Oct. 2010, Grand Copthorne Water Front Singapore, “Characterization of plasma etching damage in GaN by electrical methods”(invited talk),Masashi Katoand Masaya Ichimura
  6. 14thNational Seminar on Crystal Growth, 10-12 March 2010, School of Advanced Sciences, VIT University, Vellore -632 014, Tamil Nadu, India, “Observation of crystal defects lowering the Schottky barrier in 4H-SiCby the electrochemical deposition”(invited talk),Masashi Kato
  7. The 11-th International Conference-School,ADVANCED MATERIALS AND TECHNOLOGIES,August 27-31, 2009, Palanga, Lithuania, “Characterization of deep level and carrier lifetime in silicon carbide”(invited talk),Masashi Kato
  8. National Conference cum Workshop on Materials Science and Technology (2-4 December 2007) Bangladesh University of Engineering & Technology, Dhaka, Bangladesh, “Characterization of Deep Levels in 4H-SiC by Capacitance Transient Methods” (invited talk),Masashi Kato and Masaya Ichimura
  9. 11thNational Seminar on Crystal Growth(with international participation), 07-09 December 2006, Centre for Crystal Growth, SSN College of Engineering, Old Mahabalipuram Road, SSN Nagar, Kalavakkam-603110, Tamil Nadu, INDIA,“Electrical and Structural Characterization of Silicon Carbide Wafers”(invited talk),Masashi Kato, Masaya Ichimura

知的財産等

  1. 「高変換効率SiC光電極およびそれを用いた水素製造装置」特願2016-033015加藤正史、市川尚澄2016年2月24日出願
  2. 「高変換効率SiC光電極およびそれを用いた水素製造装置」特願2015-076647加藤正史、長谷川貴大、市川尚澄2015年4月3日出願
  3. 「高変換効率SiC光電極およびそれを用いた水素製造装置」特願2015-014184加藤正史、長谷川貴大、市川尚澄2015年1月28日出願
  4. 「高変換効率SiC光電極」特願2014-227634加藤正史、長谷川貴大、市川尚澄2014年11月10日出願
  5. 「界面抵抗を低減したSiC光電極およびその製造方法、ならびにSiC光電極を用いた水素製造装置」特願2014-015515、加藤正史、長谷川貴大2014年1月30日出願
  6. 「半導体キャリアライフタイム測定方法」特願2013-165683、加藤正史、森祐人2013年8月9日出願
  7. 「ハウリング低減システム及びそれに用いられるアナログ電子回路」特願2013-051477加藤正史、久保真奈美2013年3月14日出願
  8. 「ハウリング低減システム及びそれに用いられるアナログ電子回路」特願2013-051469加藤正史、久保真奈美、谷口淳紀2013年3月14日出願
  9. 「ハウリング低減システム及びそれに用いられるアナログ電子回路」特願2013-51488加藤正史、久保真奈美、谷口淳紀2013年3月14日出願
  10. 「アクティブノイズコントロールシステムおよびそれに用いられるアナログ電子回路」特願2013-014367加藤正史、山中星良2013年1月29日出願
  11. 「アクティブノイズコントロールシステムおよびそれに用いられるアナログ電子回路」特願2013-010334加藤正史、兵藤樹2013年1月23日出願
  12. 「光触媒用シリコンカーバイドおよびこれを用いた光触媒反応方法」特願2012-177231加藤正史、安田智成2012年8月9日出願
  13. 「ハウリング低減システム及びそれに用いられるアナログ電子回路」特願2012-010991加藤正史、谷口淳紀2012年1月23日出願
  14. 「ショットキーダイオードおよびその製造方法」特願2010-020444加藤正史、木村允哉2010年2月1日出願
  15. 「アクティブノイズコントロールシステム用アナログ集積回路」特願2006-251828加藤正史、大畑宏文2006年9月15日出願登録番号52002392013年2月22日登録
  16. 「アクティブノイズキャンセリングシステム用アナログ集積回路」特願2006-31840根上崇、加藤正史2006年2月9日出願
  17. 「サンプルホールド回路」特願2005-032503寺田信行、加藤正史、荒井英輔2005年2月9日出願登録番号47791132011年7月15日登録
  18. 「炭化ケイ素への電極形成方法、電極形成装置、電極を用いた半導体素子およびその製造方法」特願2004-184161加藤正史、徳山現2004年6月22日出願登録番号48106512011年9月2日登録
  19. 「炭化ケイ素の酸化膜製造方法、酸化膜製造装置、および酸化膜を用いた半導体素子の製造方法」特願2001-324997加藤正史、市村正也、荒井英輔2001年10月23日出願

受賞学術賞等

担当授業科目

ディジタル電子回路,集積回路設計,電子材料評価論,機能電子応用実験,機能電子セミナー,半導体評価特論,基礎化学,フレッシュマンセミナー(名古屋工業大学 2016年度)

所属学会等

委員会活動

社会貢献活動等

名古屋工業大学の教員として公開講座、高大連携活動などを実施してきた。

教員からの一言

省エネルギー社会を担う次世代半導体デバイス実現に貢献していきたいと思います。