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未来材料・システム研究所 未来エレクトロニクス集積研究センター

ARULKUMARAN Subramaniam(アルルクマラン スブラマニアム), 客員教授

ARULKUMARAN Subramaniam

(Capability Manager/Principal Research Scientist, Temasek Laboratories@NTU, Nanyang Technological University, Singapore.)

E-Mailアドレス

subramaniam*@*ntu.edu.sg(メール送信の際は@前後の*を削除してください)

学歴

職歴

Additional post in Nanyang Technological University,TL@NTU, Singapore

研究分野を表すキーワード

受賞学術賞等

所属学会等

専門分野に関する活動

TPC Committee Member:

Workshop/Seminar:

Session Chair:

出版・論文等

https://scholar.google.com.sg/citations?user=wfMe8-kAAAAJ&hl=en

Research Works Featured in Reputed Magazines

  1. Compound Semiconductors, “GaN: The logical successor to silicon?”, June 2015, pp.41-45. http://www.siliconsemiconductor.net/article/97412-GaN-The-logical-successor-to-silicon.php
  2. Semiconductor-Today, Technology Focus: “Stressed out InAlN/GaN fin-HEMT boosts performance”, Vol 10(4), May/June 2015, pp.96-97 http://www.semiconductor-today.com/news_items/2015/feb/arulkumaran_260215.shtml
  3. Semiconductor-Today, Conference Report: IEDM 2014 “Power & Speed Highlights for Compound Semiconductors”, Vol 10 (1), Feb 2015, pp.94-100. http://www.semiconductor-today.com/features/PDF/semiconductor-today_february2015-Power-speed.pdf
  4. Yole Developments, GaN RF Market Report 2014 – Late News, “High Johnson’s figure of merit (8.32 THz·V) in 0.15-μm conventional T-gate AlGaN/GaN HEMTs on silicon” {http://www.yole.fr}
  5. Semiconductor-Today, “First high-frequency noise report of InAlN barrier HEMTs on silicon”, Vol 9(8) Oct 2014, pp.102-103. http://www.semiconductor-today.com/features/PDF/SemiconductorToday_October2014-First-high-frequency.pdf
  6. Semiconductor-Today, “Pushing high-power, high-frequency performance of GaN HEMTs on silicon”, News, 4 Apr 2014. http://www.semiconductor-today.com/features/PDF/SemiconductorToday_MayJune2014-Pushing-high-power.pdf
  7. Semiconductor-Today, “High-frequency nitride HEMTs on silicon with high breakdown”, News, 11 Oct. 2013, Vol 8(9), Nov 2013, p.90. http://www.semiconductor-today.com/features/PDF/SemiconductorToday_October2014-First-high-frequency.pdf
  8. Compound Semiconductors, “Scaling up microwave GaN HEMT fabrication-200 mm (111) Silicon Provides a platform for high frequency, high-power transistors”, Vol.19(1), Jan/Feb 2013, p.76.
  9. Semiconductor-Today, “Step towards integrating GaN HEMTs and CMOS”, Vol. 8(1), Feb. 2013, p.98. http://www.semiconductor-today.com/features/PDF/SemiconductorToday_Feb2013_Step_towards.pdf
  10. Compound Semiconductors, “Microwave GaN-On-Si HEMTs Compatible With Non-Gold Metal Stack”, News, 14 Jan 2013. https://www.compoundsemiconductor.net/article/90336-microwave-gan-on-si-hemts-compatible-with-non-gold-metal-stack.html
  11. Semiconductor-Today, “First submicron AlGaN/GaN HEMTs on 8-inch silicon”, Vol. 7(9), Nov. 2012, p86. https://www.compoundsemiconductor.net/article/90327-first-microwave-algangan-hemts-on-8-inch-silicon.html
  12. Semiconductor-Today, “First ammonia MBE nitride HEMTs on silicon” Vol. 7(8), Oct. 2012, p.86. http://www.semiconductor-today.com/features/PDF/SemiconductorToday_October2012_First-ammonia-MBE.pdf
  13. Compound Semiconductors, “Ammonia Speeds MBE growth of GaN-on-Si HEMTs”, Vol.18(7) , Oct 2012, p.79. https://www.compoundsemiconductor.net/article/89951-ammonia-speeds-mbe-growth-of-gan-on-silicon-hemts.html
  14. Compound Semiconductors, “SiC substrates alleviate drain current collapse”, Vol. 8(11), Dec.2002, p.40.

Books

Journal Papers (Selected)

Applied Physics Letters– 26; Japanese J. Applied Physics – 11; Applied Physics Express– 9; IEEE Electron Device Letters– 8; Phys. Status Solidi– 6; IEEE Trans. Electron Devices– 5; Nucl. Instru. Methods B– 4 and etc…

  1. Thermally Stable Device Isolation by Inert Gas Heavy Ion Implantation in AlGaN/GaN HEMTs on Si, J. Vac. Sci. and Tech. B 34, 042203 (2016). http://dx.doi.org/10.1116/1.4955152
  2. Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation, Microelectronics Reliability, Vol. 64, pp.589-593, Sept 2016. http://dx.doi.org/10.1016/j.microrel.2016.07.012
  3. AlGaN/GaN HEMTs on Si with sputtered TiN gate, Phys. Stat. Solid A, 1-7 (2016) http://dx.doi.org/10.1002/pssa.201600555
  4. A Comprehensive Compact Model for GaN HEMTs, Including Quasi-Steady-State and Transient Trap-Charge Effects, IEEE Trans. Electron Devices, 63(4), 1478 (2016). http://dx.doi.org/10.1109/TED.2016.2533165
  5. Effect of surface pretreatment on interfacial chemical bonding states of atomic layer deposited ZrO2 on AlGaN, J. Vac. Science and Technol., A 33, 05E117 (2015). http://dx.doi.org/10.1116/1.4927164
  6. Distribution of trap energy level in AlGaN/GaN high-electron-mobility transistors on Si under ON-state stress, Appl. Phys. Exp. 8, 104101 (2015) http://dx.doi.org/10.7567/APEX.8.104101
  7. Record Low Contact Resistance for InAlN/GaN HEMTs on Si with Non-Gold metal, Jpn. J. Appl. Phys., 54, 04DF12 (2015) http://dx.doi.org/10.7567/JJAP.54.04DF12
  8. Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111), J. Appl. Phys., 117, 245305 (2015) http://dx.doi.org/10.1063/1.4923035
  9. Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in AlGaN/GaN high-electron-mobility transistors, Appl. Phys. Exp. 8, 041001 (2015) http://dx.doi.org/10.7567/APEX.8.041001
  10. Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111), Appl. Phys. Lett., 106, 083508 (2015). http://dx.doi.org/10.1063/1.4913841
  11. Impact of post-deposition annealing on interfacial chemical bonding states between AlGaN and ZrO2 grown by atomic layer deposition, Applied Physics Letters 106, 091603 (2015). http://dx.doi.org/10.1063/1.4914351
  12. Electron Velocity of 6×107 cm/s at 300 K in Stress Engineered InAlN/GaN nano-channel High-Electron-Mobility Transistors, Appl. Phys. Lett., 106, 053502 (2015). http://dx.doi.org/10.1063/1.4906970
  13. Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy, J. Appl. Phys., 117, 025301 (2015). http://dx.doi.org/10.1063/1.4905620
  14. Enhanced OFF-state breakdown voltage in AlGaN/GaN HEMTs on Si with low-k Benzocyclobutane (BCB) Encapsulation, Jpn. J. Appl. Phys., 54, 036504 (2015) http://dx.doi.org/10.7567/JJAP.54.036504
  15. High-Frequency Microwave Noise Characteristics of InAlN/GaN HEMTs on Si(111) Substrate, IEEE Electron. Device Lett., Vol. 35(10), pp.992-994, Oct 2014. http://dx.doi.org/10.1109/LED.2014.2343455
  16. Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition, Appl. Phys. Lett., 105, 152104 (2014) http://dx.doi.org/10.1063/1.4898577
  17. Band alignment between GaN and ZrO2 formed by atomic layer deposition, Appl. Phys. Lett., 105, 022106 (2014) http://dx.doi.org/10.1063/1.4890470
  18. High Johnson’s Figure-of-Merit (8.32 THz·V) in 0.15-µm Conventional T-gate AlGaN/GaN HEMTs on Silicon, Appl. Phys. Exp., 7 (2014) 044102. http://dx.doi.org/10.7567/APEX.7.044102
  19. A Compact Model for Generic MIS-HEMTs Based on the Unified 2DEG Density Expression, IEEE Trans. Electron Devices., Vol.61(2),pp.314-323, Feb 2014. http://dx.doi.org/10.1109/TED.2013.2295400
  20. Enhanced Breakdown Voltage with High Johnson’s figure-of-merit in 0.3-µm T-gate AlGaN/GaN HEMTs on Silicon by (NH4)2Sx Treatment, IEEE Electron Device Lett.., Vol. 34, no.11, pp.1364-1366, Nov 2013. http://dx.doi.org/10.1109/LED.2013.2279882
  21. Reduction of Current Collapse in AlGaN/GaN MISHEMTs with Bilayer SiN/Al2O3 Dielectric Stack, Phys. Stat. Solidi (c) Vol. 10, No. 11, pp.1421-1425, Oct 2013. http://dx.doi.org/10.1002/pssc.201300219
  22. Low-Contact-Resistance Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contacts on Undoped AlGaN/GaN HEMTs grown on Silicon, Appl. Phys. Exp., 6, pp.116501-1, Oct 2013. http://dx.doi.org/10.7567/APEX.6.116501
  23. Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors on Silicon, Appl. Phys. Lett., 103, 142109, pp.1-3, Oct 2013. http://dx.doi.org/10.1063/1.4824445
  24. Demonstration of Submicron-Gate AlGaN/GaN High-Electron-Mobility Transistors on Silicon with Complementary Metal–Oxide–Semiconductor-Compatible Non-Gold Metal Stack, Applied Physics Express, 6 (2013) 016501. http://dx.doi.org/10.7567/APEX.6.016501
  25. Demonstration of AlGaN/GaN High-Electron-Mobility-Transistors on 100-mm-Diameter Si (111) by Ammonia Molecular Beam epitaxy, Applied Physics Express, 5 (2012) 091003. http://dx.doi.org/10.1143/APEX.5.091003
  26. Direct Current and Microwave Characteristics of Sub-micron AlGaN/GaN High-Electron-Mobility Transistors on 8-Inch Si(111) Substrate, Jpn. J. Appl. Phys., 51 (2012)111001. http://dx.doi.org/10.1143/JJAP.51.111001
  27. AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111), Applied Physics Letters, 101, (2012), 082110-1 -5. http://dx.doi.org/10.1063/1.4746751
  28. Side-gate effects on the direct current and radio frequency characteristics of AlGaN/GaN high-electron-mobility transistor on silicon, Appl. Phys. Lett., v 99, n 16, p 163505, Oct. 2011.
  29. Improved Device Performance by Post-Oxide Annealing in Atomic-Layer-Deposited Al2O3/AlGaN/GaN Metal-Insulator-Semiconductor High Electron Mobility Transistor on Si, Appl. Phys. Exp., vol. 4, pp 104102-1, Sep. 2011. http://dx.doi.org/10.1143/APEX.4.104102
  30. Improved Power Device Figure-of-Merit (4.0×108 V2 -1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si, Appl. Phys. Exp, vol. 4, pp 084101–3, Aug. 2011. http://dx.doi.org/10.1143/APEX.4.084101
  31. Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation, Applied Physics Letters, Vol. 98, Mar 2011, 163506, pp.1-3. http://dx.doi.org/10.1063/1.3567927
  32. Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor, Applied Physics Letters, Vol. 98, Mar 2011, 163501, pp.1-3. http://dx.doi.org/10.1063/1.3573794
  33. Temperature dependent microwave noise characteristics in ALD Al2O3/AlGaN/GaN MISHEMTs on silicon substrate, IEEE Electron Device Letter, Vol 32, Mar 2011, pp.318-320. http://dx.doi.org/10.1109/LED.2010.2102332
  34. Comprehensive study on the bias-dependent equivalent circuit elements affected by PECVD-SiN passivation in AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, Vol. 58, Feb 2011, pp.473-479. http://dx.doi.org/10.1109/TED.2010.2093144
  35. High Vertical Breakdown Strength with low specific on-resistance in AlGaN/AlN/GaN HEMTs on silicon, Phys. Stat. Solidi RRL, Vol. 5, No.1, Jan 2011, pp.37-39. http://dx.doi.org/10.1002/pssr.201004465
  36. Demonstration of AlGaN/GaN HEMTs on 100mm diameter Silicon by plasma assisted MBE, Applied Physics Letters, Vol. 97, Dec 2010, 232107, pp.1-3. http://dx.doi.org/10.1063/1.3518717
  37. Study on the Temperature Dependence of the Microwave-Noise Characteristics in AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, Vol. 57, No. 9, Sept 2010, pp.2353-2357.
  38. Improved recess-ohmics in AlGaN-GaN High-Electron-Mobility Transistors with AlN Spacer Layer on Silicon Substrate, Phys. Stat. Sol. C, 7 (2010) pp.2412-2414. http://dx.doi.org/10.1002/pssc.200983860
  39. Study of current collapse by quiescent-bias stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors, Solid-State Electronics, 54 (2010) pp.1430-1433. http://dx.doi.org/10.1016/j.sse.2010.05.002
  40. Improved Linearity for Low Noise Applications in 0.25-µm GaN MISHEMTs using ALD Al2O3 as Gate Dielectric, IEEE Electron Device Letters, 31. No.8, pp.803-805, Aug. 2010. http://dx.doi.org/10.1109/LED.2010.2051136
  41. Analytical modeling of high-frequency noise including temperature effects in GaN HEMTs on high-resistivity Si substrates, IEEE Transactions on Electron Devices, vol. 57, no. 7, pp. 1485-1491, Jul. 2010. http://dx.doi.org/10.1109/TED.2010.2047897
  42. Structural and Electrical Characteristics of AlGaN/GaN Interfaces for UV photodetectros, Electrochem. Solid-state Lett., Vol. 13, No. 9, H301-H304, June 2010. http://dx.doi.org/10.1149/1.3447813
  43. Low Specific On-Resistance AlGaN/AlN/GaN High Electron Mobility Transistors on High Resistivity Silicon Substrate, Electrochemical and Solid-State Letters, Vol. 13, No. 5, pp. H169-H172, Mar. 2010. http://dx.doi.org/10.1149/1.3339068
  44. High microwave-noise performance of AlGaN/GAN MISHEMTs on silicon with Al2O3 gate insulator grown by ALD, IEEE Electron Device Letter, vol. 31, no. 2, pp. 96-98, Feb. 2010. http://dx.doi.org/10.1109/LED.2009.2036135
  45. Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 as gate insulator, Applied Physics Letters, vol. 95, no. 22, p. 223501, Nov. 2009. http://dx.doi.org/10.1063/1.3268474
  46. Mechanism of increased high-frequency channel noise with PECVD SiN passivation in AlGaN/GaN HEMTs, IEEE Electron Device Letters, vol. 30, no. 11, pp. 1122-1124, Nov. 2009. http://dx.doi.org/10.1109/LED.2009.2030908
  47. Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from -50 oC to 200 oC, Applied Physics Letters, 94 (2009) pp. 142105, 1-3. http://dx.doi.org/10.1063/1.3114422
  48. Influence of ammonia in the deposition process of SiN on the performance of SiN/AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors on 4-inch Si (111), Applied Physics Express, 2 (2009) pp.031001-1-3. http://dx.doi.org/10.1143/APEX.2.031001
  49. Improved microwave noise performance by SiN passivation in AlGaN/GaN HEMTs on Si, IEEE Microwave and Wireless Components Letters, Vo. 19, No.6, pp.383-385,June 2009. http://dx.doi.org/10.1109/LMWC.2009.2020027
  50. Sheet carrier density enhancement by Si3N4 passivation of non-polar a-plane sapphire grown AlGaN/GaN heterostructures, Appl. Phys. Lett., 92, (2008), 092116, 1-3. http://dx.doi.org/10.1063/1.2857479
  51. High temperature power performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity Si substrate, Appl. Phys. Lett., 91 (2007) 083516, 1-3. http://dx.doi.org/10.1063/1.2773987
  52. Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN/GaN HEMTs, Appl. Phys. Lett., 90 (2007) 173504, 1-3. http://dx.doi.org/10.1063/1.2730748
  53. Temperature Dependent Microwave Performance of AlGaN/GaN HEMTs on High-Resistivity Silicon Substrate, Thin Solid Films, 515 (2007) pp.4517-4521. http://dx.doi.org/10.1016/j.tsf.2006.07.168
  54. Enhancement of both DC and Microwave Characteristics of AlGaN/GaN HEMTs by Furnace Annealing, Appl. Phys. Lett. 88 (2006) 023502, 1-3. http://dx.doi.org/10.1063/1.2162092
  55. On the effects of gate recess etching in current collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors, Jpn. J. Appl. Phys, 45 (2006) pp.L220-L223. http://dx.doi.org/10.1143/JJAP.45.L220
  56. Studies of AlGaN/GaN high-electron-mobility transistors on 4-inch diameter Si and sapphire substrates, Solid-state Electron., 49 (2005) pp.1632-1638. http://dx.doi.org/10.1016/j.sse.2005.08.014
  57. A comparison on the electrical characteristics of SiO2, SiON and SiN as the gate insulators for the fabrication of AlGaN/GaN MOS/MIS-HEMTs, Jpn. J. Appl. Phys., 44 (2005) pp. 4911-4913. http://dx.doi.org/10.1143/JJAP.44.4911
  58. Studies of Electron Beam Evaporated SiO2/AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors, Jpn. J. Appl. Phys. 44 (2005) pp.L812-L815. http://dx.doi.org/10.1143/JJAP.44.L812
  59. Demonstration of un-doped quaternary AlInGaN/GaN heterostructure field-effect transistor on sapphire substrate, Appl. Phys. Lett., 86 (2005) p.223510. http://dx.doi.org/10.1063/1.1942643
  60. Studies on the Influences of i-GaN, n-GaN, p-GaN and InGaN Cap Layers in AlGaN/GaN High-Electron-Mobility Transistors, Jpn. J. Appl. Phys. 44 (2005) pp.2953-2960. http://dx.doi.org/10.1143/JJAP.44.2953
  61. Fabrication of AlGaN/GaN double-insulator metal-oxide-semiconductor high-electron-mobility transistors using SiO2 and SiN as gate insulators, Phys. Stat. Solidi (a) 202 (2005) pp.R32-R34. http://dx.doi.org/10.1002/pssa.200410002
  62. Studies on electron beam evaporated ZrO2/AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors, Phys. Stat. Solidi (a), 202 (2005) pp.R16-R18. http://dx.doi.org/10.1002/pssa.200409084
  63. Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator, Mater. Sci. and Engg. B 119 (2005) pp.36-40. http://dx.doi.org/10.1016/j.mseb.2005.01.005
  64. On the enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN/GaN HEMTs on 4-inch diameter Silicon, Appl. Phys. Lett. 86 (2005), p.123503. http://dx.doi.org/10.1063/1.1879091
  65. Current collapse-free i-GaN/AlGaN/GaN HEMTs with and without surface passivation, Appl. Phys. Lett. 85 (2004), pp.5745-5747. http://dx.doi.org/10.1063/1.1830677
  66. Characterization of Different-Al-Content AlGaN/GaN Heterostructures and HEMTs Grown on 100-mm-Diameter Sapphire Substrates by Metal organic Vapor Phase Epitaxy, Jpn. J. Appl. Phys. 43 (2004) pp.7939-7943. http://dx.doi.org/10.1143/JJAP.43.7939
  67. Surface passivation effects on AlGaN/GaN HEMTs with SiO2, Si3N4 and Silicon Oxynitride, Appl. Phys. Lett., 84 (2004), pp.613-615. http://dx.doi.org/10.1063/1.1642276
  68. Electrical characteristics of AlGaN/GaN HEMTs on 4-inch diameter sapphire substrate, IEEE Electron Dev. Lett., 24 (2003), pp.497-499. http://dx.doi.org/10.1109/LED.2003.815162
  69. Temperature dependence of gate leakage current in AlGaN/GaN HEMTs, Appl. Phys. Lett. 82 (2003), pp.3110-3112. http://dx.doi.org/10.1063/1.1571655
  70. Characterization of different Al-content AlGaN/GaN heterostructures and HEMTs on sapphire, J. Vac. Sci. and Tech. B 21 (2003), pp.888-894. http://dx.doi.org/10.1116/1.1556398
  71. Comparative study of drain-current collapse in AlGaN/GaN HEMTs on sapphire and SI-SiC, Appl. Phys. Lett. 81 (2002), pp.3073-3075. http://dx.doi.org/10.1063/1.1512820
  72. Improved dc characteristics of AlGaN/GaN HEMTs on AlN/sapphire templates, Appl. Phys. Lett. 81 (2002), pp.1131-1133. http://dx.doi.org/10.1063/1.1498874
  73. Characteristics of BCl3 plasma-etched GaN Schottky diodes, Jpn. J. Appl. Phys. 41 (2002), pp.L493-L495. http://dx.doi.org/10.1143/JJAP.41.L493
  74. High temperature effects of AlGaN/GaN HEMTs on sapphire and SI-SiC substrate, Appl. Phys. Lett. 80 (2002), pp.2186-2188. http://dx.doi.org/10.1063/1.1461420
  75. High-Transconductance AlGaN/GaN HEMTs on SI-SiC Substrate, Jpn. J. Appl. Phys. Lett. 40 (2001), pp.L1081-L1083. http://dx.doi.org/10.1143/JJAP.40.L1081
  76. Effects of annealing on Ti, Pd and Ni/n-Al0.11Ga0.89N Schottky Diodes, IEEE Trans. and Electron Devices, 48 (2001), pp.573-580. http://dx.doi.org/10.1109/16.906453
  77. Electrical Characteristics of Schottky contacts on GaN and Al0.11G0.89N, Jpn. J. Applied Physics part 2, 39 (2000) pp.L351-L353. http://dx.doi.org/10.1143/JJAP.39.L351
  78. Investigations on SiO2 and Si3N4/n-GaN insulator-semiconductor structures with low interface-state density, Appl. Phys. Lett., 73 (1998) pp.809-811. http://dx.doi.org/10.1063/1.122009
  79. Investigations on the evaluation of Schottky barrier diode parameters on the proton irradiated Ti/n-GaAs, Radiation Effects and Defects in Solids, 152 (2000) pp.39-47. http://dx.doi.org/10.1080/10420150008211812
  80. Low energy proton irradiation induced interface defects on Pd/n-GaAs Schottky diodes and characteristics, Nucl. Inst. and Meth., B140 (1998) pp.119-124. http://dx.doi.org/10.1016/S0168-583X(98)00003-2
  81. Investigation on the electrical and structural characteristics of 50 MeV 7Li implanted SI-InP, Phys. Stat. Sol. (a) 167 (1998) pp.157-163. http://dx.doi.org/10.1002/(SICI)1521-396X(199805)167
  82. Improved electrical characteristics on the anodic oxide/n-InP interface for MOS structures, J. Electron. Mater. 27 (1998), pp. 1358-1361. http://dx.doi.org/10.1007/s11664-998-0097-0
  83. Current-Voltage Characteristics of Low energy proton and alpha particle irradiated Au and Ag/n-GaAs Schottky Barrier Diodes, Solid-state Electron., 41 (1997), pp.802-805. http://dx.doi.org/10.1016/S0038-1101(96)00102-5
  84. Vapor pressure controlled Czochralski (VCZ) growth - a method to produce electronic materials with low dislocation density, Cryst. Res. and Tech., 33 (1997) pp.35-50. http://dx.doi.org/10.1002/crat.2170320104
  85. Electrical characteristics of 100 MeV 28Si implanted LEC grown GaAs<100>, Nucl. Instr. and Meth., B117 (1996) pp.243-248. http://dx.doi.org/10.1016/0168-583X(96)00309-6
  86. On the enhancement of effective barrier height in Ti/n-GaAs Schottky Barrier Diodes, Nucl. Instr. and Meth., B119 (1996) pp.519-522. http://dx.doi.org/10.1016/S0168-583X(96)00465-X
  87. Investigations of Al, Au, and Ag Schottky diodes on LEC grown n-GaAs<100>, J. Electron. Mater., 24 (1995) pp.813-817. http://dx.doi.org/10.1007/BF02653329
  88. Annealing behavior of 1 MeV hydrogen implanted LEC grown InP<100>, Nucl. Instr. and Meth., B101 (1995) pp.240-242. http://dx.doi.org/10.1016/0168-583X(95)00486-6
  89. Effect of irradiation on the micro hardness of the LEC grown Semi-Insulating GaAs Single Crystals, J. Nucl. Mater., 225 (1995) pp.314-317.
  90. Structural and mechanical characterization of ion implanted GaAs and InP single crystals grown by LEC technique, Mater. Sci. and Eng., B28 (1994) pp.461-464. http://dx.doi.org/10.1016/0921-5107(94)90106-6

Invited Presentations (Selected)

  1. Ultra High Speed Transport Properties in GaN Nano-Channel Transistors by Tensile Stress, European Materials Research Society (EMRS), 19-22 Sept 2016, Warsaw, Poland.
  2. Ta/Si-based Non-Gold Ohmic Contacts for GaN HEMTs on Si, 7th International Joint Workshop on Nitride Semiconductor and Devices (JWNSD 2016), 11 Apr 2016, Nagoya Institute of Technology, Nagoya, Japan.
  3. Influence of Tensile Stress in Nano-Channel GaN Fin-HEMTs on Si substrate, Center for Integrated Research of Future Electronics, 9 Mar 2016, Nagoya University, Nagoya, Japan.
  4. Stress Engineered Nano-Channel InAlN/GaN Fin-HEMTs on Si substrate, 2016 RCIQE International Seminar, 8 Mar 2016, Hokkaido University, Sapporo, Japan.
  5. GaN HEMTs on Si substrate with Non-Gold Process Technology, 8th International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma) 2016, 6-10 March 2016, Nagoya University, Nagoya, Japan.
  6. Implant-isolation in AlGaN/GaN high-electron-mobility transistors on Si substrate, Topical Workshop on Heterostructure Microelectronics (TWHM 2015), 23-26 Aug 2015, Takayama, Japan
  7. High Frequency Noise in GaN HEMTs on Si substrate, Topical Workshop on Heterostructure Microelectronics (TWHM 2015), 23-26 Aug 2015, Takayama, Japan
  8. Nano-Channel InAlN/GaN Fin-HEMTs for Ultra-High-Speed Electronics, The 2015 International Meeting for Future of Electron Devices, Kansai, 4-5 June 2015, Kyoto, Japan.
  9. AlGaN/GaN HEMTs on 200-mm Diameter Silicon Substrate, Topical Workshop on Heterostructure Microelectronics (TWHM 2013), 2-5 Sept 2013, Hakodate, Japan.
  10. Development of GaN HEMTs on 8-inch Silicon Substrate, Joint Workshop on Nitride Semiconductor and Devices (JWNSD 2012), 26 Oct 2012, Guangzhou, China.
  11. Influence of Ammonium Sulphide [(NH4)2Sx] pre-treatment in the Current Collapse of both E- and D-mode AlGaN/GaN HEMTs on Si substrate, Joint Workshop on Nitride Semiconductor and Devices (JWNSD 2012), 26 Oct 2012, Guangzhou, China.
  12. Atomic-Layer-Deposition Al2O3 and HfO2 Gate Dielectric for Enhanced Performance AlGaN/GaN MISHEMT on Silicon Substrate, Int. Joint Workshop on III-V Compound Semiconductors and Devices, 3rd Sept 2011, Xi’an, China.
  13. Bi-layer Al2O3/SiN passivation in AlGaN/GaN HEMTs on 4-inch Silicon, Int. Joint Workshop on III-V Compound Semiconductors and Devices, 3rd Sept 2011, Xi’an, China.
  14. Activities for Nitride Semiconductors in the World, 10th Nitride Semiconductor Application Workshop, 10th March 2011, Aichi Science & Technology Foundation, Nagoya, Japan.
  15. High Breakdown Voltage Characteristics of AlGaN/GaN HEMTs on 4-inch Si, 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 6-9 March 2011, Nagoya Institute of Technology, Nagoya, Japan.
  16. High Breakdown AlGaN/GaN HEMTs on 4-inch Si for power applications, IMRE-Industry Gallium Nitride Scientific Workshop, 3 March 2011, Institute of Materials Research Engineering (IMRE), Singapore.
  17. AlGaN/GaN HEMTs on Si for High Power Switching Devices, Joint Workshop on Nitride Semiconductors and Devices 2010, Hotel Grand Copthorne Water Front, Singapore, 18th Oct 2010.
  18. GaN HEMTs for low noise Applications, 2010 Communications Microsystems Optoelectronics Sensors (CMOS) Emerging Technologies Workshop, 19-21 May 2010, Whistler, Canada.
  19. High performance AlGaN/AlN/GaN HEMTs on Silicon Substrate, 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 7-10 Mar. 2010, Maijo University, Nagoya, Japan.
  20. AlGaN/GaN HEMTs and SiN/AlGaN/GaN MIS-HEMTs on high-resistivity Silicon, 15th International Workshop on Physics of Semiconductor Devices (IWPSD), 15-19 Dec 2009, New Delhi, INDIA.
  21. Sub-micron high-electron-mobility transistors for THz applications, Workshop on THz science and Technology, A-star Institute of Micro Electronics, 5th June 2008, Singapore.
  22. Effects of surface passivation on AlGaN/GaN HEMTs, International Conference on Electronic Materials-2008” 28 July-1 Aug 2008, Hilton, Sydney, Australia.
  23. Surface passivation effects in AlGaN/GaN HEMTs on high-resistivity Si substrate, International Workshop on Physics of Semiconductor Devices (IWPSD), 16-20 Dec 2007, Mumbai, INDIA.
  24. AlGaN/GaN HEMTs on Sapphire, Si and SiC substrates, INTERNATIONAL WORKSHOP on Crystal Growth & Characterization of Advanced Materials, Anna University, Chennai, India, 8-14 Jan 2006.

Contributed Papers in Reputed Conferences/Workshops (Selected)

Device Conferences: IEEE IEDM; IEEE IMS; DRC; SSDM; TWHM; EuMIC and etc…

III-Nitride Conferences: ICNS; IWN; ISCS; EMC; ISPlasma, ICMAT and etc…

Manufacturing Conference: CSMantech

  1. Role of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) ON-state degradation, 27th European Symp. On Reliability of Electron Devices, Failure Physics and Analysis (ESREF 2016), 19-22 Sept. 2016, Halle (Saale), Germany.
  2. Effect of GaN Channel thickness on the device characteristics of DH-HEMT on 100-mm Si grown by MOCVD, Int. Workshop on Nitride Semiconductors 2016 (IWN 2016), 2-7 Oct 2016, Orlando, Florida, USA.
  3. High Linearity Performance of InAlN/GaN HEMTs on Si at Elevated Temperature, Int. Workshop on Nitride Semiconductors 2016 (IWN 2016), 2-7 Oct 2016, Orlando, Florida, USA.
  4. Improved Device Isolation in AlGaN/GaN HEMTs by multi-energy 131Xe+ Implantation, Int. Workshop on Nitride Semiconductors 2016 (IWN 2016), 2-7 Oct 2016, Orlando, Florida, USA.
  5. Drain Current-Transient Characteristics of AlGaN/GaN HEMTs on Si Under Fully On-State Stress, IUMRS-International Conference on Electronic Materials (ICEM) 2016, 4-8 July 2016, SUNTEC Singapore.
  6. Influence of GaN Cap Thickness on the 2DEG Properties of AlGaN/GaN HEMT Grown on 4-Inch Si by MOCVD, IUMRS-International Conference on Electronic Materials (ICEM), 4-8 July 2016, SUNTEC Singapore.
  7. AlGaN/GaN High Electron Mobility Transistors on Si with Sputtered TiN gate, Int. Symp. on Comp. Semicond. (ISCS 2016), June 26th-30th, 2016, Toyama, Japan.
  8. The effect of III/V ratio during AlN Growth on the stress evoluation in GaN grown on 6H-SiC by plasma-assisted MBE, Int. Conf. on Nitride Semiconductors, 30 Aug-4 Sept 2015, Beijing, China
  9. Enhanced Device Breakdown with Low Current Collapse in AlGaN/GaN HEMTs on Si by Post-process Oven Baking, Topical Workshop on Heterostructure Microelectronics (TWHM 2015), 23-26 Aug 2015, Takayama, Japan
  10. GaN HEMT compact model for circuit simulation, Proceedings of the 2015 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2015, 1-4 June 2015, pp.535-538. https://doi.org/10.1109/EDSSC.2015.7285169
  11. In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03A/mm, IOFF=1.13 μA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V, IEEE IEDM Tech. Digest, pp. 594-597, Dec 2014. http://dx.doi.org/10.1109/IEDM.2014.7047109
  12. Improved Microwave Noise Performance in 0.15µm AlGaN/AlN/GaN HEMTs on Silicon, European Microwave Integrated Circuits Conference (EuMIC -2014), Rome, Italy, Oct 2014. http://dx.doi.org/10.1109/EuMIC.2014.6997887
  13. Record Low Contact Resistance for InAlN/GaN HEMTs on Si with Non-Gold metal, Solid State Materials and Devices (SSDM) 2014, Tsukuba, Japan, 8-11 Sept 2014.
  14. Carbon doped GaN buffer for AlGaN/GaN HEMT heterostructure using Ammonia-MBE, International Workshop on Nitride Semiconductors, 24-29 Aug 2014, Wroclaw, Poland.
  15. Improved Device Isolation in AlGaN/GaN HEMTs on Si by Heavy Kr+ Ion Implantation, 72nd Annual Device Research Conference, UCSB, California, USA, 22-25 June 2014, pp.115-116. http://dx.doi.org/10.1109/DRC.2014.6872324
  16. Investigations of CMOS-compatible Non-Gold Ta/Si/Ti/Al/Ni/Ta Ohmic Contact for AlGaN/GaN HEMT on Si with Low Contact Resistance, 10th International Conference on Nitride Semiconductors, 25-30 Aug 2013, Washington, D.C, USA.
  17. Enhanced OFF-state breakdown voltage in AlGaN/GaN HEMTs on Si with low-k Benzocyclobutane (BCB) Encapsulation, 10th International Conference on Nitride Semiconductors, 25-30 Aug 2013, Washington, D.C, USA.
  18. Electrical Characteristics of MOCVD Grown AlGaN/GaN HEMTs on 200 mm Silicon (111) Substrate, International Conference on Materials for Advanced Technologies (ICMAT), Singapore, 30 June - 5th July 2013.
  19. AlGaN/GaN MISHEMTs on Silicon Using Atomic Layer Deposited ZrO2 as the Gate Dielectrics, 71st Annual Device Research Conference (DRC), 23-26 June 2013, University of Notre Dame, USA. https://doi.org/10.1109/DRC.2013.6633798
  20. Low Specific ON-resistance and High Figure-of-Merit AlGaN/GaN HEMTs on Si substrate with Non-Gold Metal Stacks, 71st Annual Device Research Conference (DRC), 23-26 June 2013, University of Notre Dame, USA. https://doi.org/10.1109/DRC.2013.6633789
  21. Reduction of Current Collapse in AlGaN/GaN MISHEMTs with Bilayer SiN/Al2O3 Dielectric Stack, Int. Symp. on Comp. Semicond. (ISCS 2013), May 19th-23rd, 2013, Kobe, Japan.
  22. Uniformity Studies of AlGaN/GaN HEMTs on 200-mm diameter Si(111) substrate, CS MANTECH Conference, 13-16 May 2013, New Orleans, Louisiana, USA, pp.289-292. http://mantech.org/Digests/2013/papers/084.pdf
  23. Microwave characteristics of 0.3µm-gate AlGaN/GaN HEMTs on 8-inch Si (111), International Workshop on Nitride Semiconductors (IWN 2012), Sapporo, October 14-19, 2012, Sapporo, Japan.
  24. High Extrinsic Transconductance with Improved Breakdown Voltage in AlGaN/GaN MISHEMTs using Atomic Layer Deposited HfO2 and Ta2O5, International Workshop on Nitride Semiconductors (IWN 2012), Sapporo, October 14-19, 2012, Sapporo, Japan.
  25. Growth of AlGaN/GaN HEMT on 100 mm Si (111) by Ammonia-MBE, International Workshop on Nitride Semiconductors (IWN 2012), Sapporo, October 14-19, 2012, Sapporo, Japan.
  26. Effective Suppression of Current Collapse in Both E- and D-Mode AlGaN/GaN HEMTs on Si by [(NH4)2Sx] Passivation, International Microwave Symposium, 18-22 June 2012, Montreal, Canada. http://dx.doi.org/10.1109/MWSYM.2012.6259783
  27. Improved OFF-state Breakdown Voltage in AlGaN/GaN HEMTs grown on 150-mm Diameter Silicon-on-Insulator (SOI) Substrate, 70th Annual Device Research Conference, 18-20 June 2012, Penn State University, USA. http://dx.doi.org/10.1109/DRC.2012.6257040
  28. Trapping Analysis by Pulsed Current-Voltage Characteristics for AlGaN/GaN HEMTs On 4-inch Si (111), 4th International Symposium on Advances Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma 2012), March 4-8, 2012, Nagoya, Japan.
  29. Low Frequency Noise Investigation of AlGaN/GaN HEMTs” 13th International Symposium on Integrated Circuits (ISIC 2011), 12-14 December 2011, Singapore.
  30. A Compact Model of AlGaN/GaN on Silicon Schottky Diode and Its Application 13th International Symposium on Integrated Circuits (ISIC 2011), 12-14 December 2011, Singapore. http://dx.doi.org/10.1109/ISICir.2011.6131961
  31. Suppression of Current Collapse with improved breakdown voltage by bi-layer Al2O3/SiN passivation in AlGaN/GaN HEMTs on 4-inch Si, Topical Workshop on Heterostructure Microelectronics (TWHM 2011), Gifu, Japan, 28-31 Aug 2011.
  32. Influence of Post Oxide Annealing on the DC Performance of ALD-Al2O3/AlGaN/GaN MISHEMT on Si, 3rd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials, 6-9 March 2011, Nagoya Institute of Technology, Nagoya, Japan.
  33. Lateral and Vertical Breakdown Characteristics of AlGaN/AlN/GaN High-Electron-Mobility Transistors on Silicon, International Workshop on Nitride Semiconductors 2010 (IWN 2010), 19-24 Sept 2010, Tampa, Florida, USA.
  34. Temperature Dependent DC and RF characteristics of ALD Al2O3/AlGaN/GaN MISHEMT on Silicon Substrate, International Workshop on Nitride Semiconductors 2010 (IWN 2010), 19-24 Sept 2010, Tampa, Florida, USA.
  35. Si3N4 Passivation effects on AlGaN/GaN heterostructures with n-GaN, i-GaN, p-GaN and In0.04Ga0.96N cap layers, 2nd International Symposium on Advanced Plasma Science and its Applications for Nitrides and Nanomaterials (ISPlasma), 7-10 Mar. 2010, Maijo University, Nagoya, Japan.
  36. Analytical modeling of the temperature dependent microwave noise in AlGaN/GaN HEMTs, Proc. IEEE International Symposium on Radio-Frequency Integration Technologies (RFIT), pp. 176-179, Dec. 2009, Singapore.
  37. Improved 2DEG characteristics of AlGaN/GaN MOSHEMT with atomic-layer-deposited Al2O3, 8th International Conference on Nitride Semiconductor (ICNS), Oct, 2009, Jeju, Korea.
  38. Improved recess-ohmics in AlGaN/GaN HEMTs with AlN spacer layer on Silicon substrate, International Symposium on Compound Semiconductors 2009, UCSB, California, USA, 30 Aug -2nd Sept. 2009.
  39. Evaluation of drain current collapse in AlGaN/GaN HEMTs by quiescent-gate and quiescent-drain bias stress, Topical Workshop on Heterostructure Microelectronics (TWHM 2009), Nagano, Japan, 25-28 Aug 2009.
  40. Influence of NH3 in the surface passivation dielectrics on AlGaN/GaN heterostructures grown on a-plane and c-plane (0001) Sapphire, TMS 2009 Electronic Materials Conference, 24-26 June 2009, Penn State University, Pensylvenia, USA.
  41. Temperature dependent microwave noise parameters and modeling of AlGaN/GaN HEMTs on Si substrate, International Microwave Symposium, 7-12, June 2009, Boston, USA. http://dx.doi.org/10.1109/MWSYM.2009.5165812
  42. Temperature dependent noise characteristics of AlGaN/GaN HEMTs on Silicon, Device Research Conference (DRC), June 23-25, 2008, UCSB, California, USA. http://dx.doi.org/10.1109/DRC.2008.4800767
  43. High Temperature power performance of AlGaN/GaN HEMTs on high-resistivity Si substrate, International Conference on Nitride Semiconductors (ICNS), Sept 16-21, 2007, MGM Hotel, Las Vegas, Nevada, USA.
  44. Effect of silicon nitride passivation on microwave noise characteristics in AlGaN/GaN HEMTs on Si substrate, International Conference on Nitride Semiconductors, Sept 16-21, 2007, MGM Hotel, Las Vegas, Nevada, USA.
  45. Enhancement of sheet carrier density by Si3N4 passivation on a-plane (11-20) Sapphire grown AlGaN/GaN heterostructures, TMS 2007 Electronic Materials Conference, University of Notre Dame, Notre Dame, Indiana, USA, 20-22 June 2007, Late News
  46. Evaluation of the current collapse in gate-source and gate-drain region passivated AlGaN/GaN HEMTs on high-resistivity Si substrate, 7th Topical Workshop on heterostructure Microelectronics (TWHM), Kisarasu, Chiba, Japan 21-24 Aug. 2007, pp.107-108.
  47. AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity Silicon Substrate, 2nd MRS-S conference on Advanced Materials, IMRE, Singapore, 18-20 Jan 2006.
  48. Microwave Noise Characteristics of AlGaN/GaN HEMTs on High-Resistivity Silicon Substrate, 2005 IEEE International Workshop on Radio-Frequency Integration Technology, Singapore, (2005) pp.127-130. https://doi.org/10.1109/RFIT.2005.1598891
  49. Enhancement of DC and Microwave Characteristics of AlGaN/GaN HEMTs by Furnace Annealing, International Symposium on Compound Semiconductors (ISCS), Rust, Germany, 18-22 Sept. 2005.
  50. Temperature Dependent Microwave Performance of AlGaN/GaN HEMTs on High-Resistivity Silicon Substrate, International Conference on Materials for Advance Technology (ICMAT) 3rd -8th July 2005, Singapore.
  51. Enhancement of breakdown voltage in AlGaN/GaN HEMTs using AlN buffer layer thickness on 4-inch Silicon, Extended Abstracts of the 2004 International Conference on Solid State Devices and Materials (SSDM), Tokyo, 2004, pp.340-341.
  52. Drain current collapse in AlGaN/GaN HEMTs on sapphire and SI-SiC substrates, Extended Abstracts of the 2002 International Conference on Solid State Devices and Materials (SSDM), Tokyo, 2002, pp.284-285.
  53. Studies of AlGaN/GaN HEMTs on SI-SiC and sapphire substrates, Extended Abstracts of the 2001 International Conference on Solid State Devices and Materials (SSDM), Tokyo, 2001, pp.64-65.
  54. Excellent dc characteristics of HEMTs on Semi-insulating Silicon Carbide, 59th Device Research Conference Digest (2001), pp.91-92. https://doi.org/10.1109/DRC.2001.937887
  55. Thermal stability of Pd/Al011Ga0.89N Schottky diodes, Proc. of Int. Workshop on Nitride Semiconductors, IPAP Conf. Series 1 (2000), pp.701-704.
  56. Formation of stable anodic oxides on the HBr:K2Cr2O7:H2O polished n-InP, Physics of Semiconductor Devices, 1 (1998) pp.380-383.
  57. Effect of irradiation induced interface defects on GaAs Schottky diodes, Physics of Semiconductor Devices, 1 (1998) pp.297-300.
  58. Evaluation of the GaAs Schottky diode parameters, Physics of Semiconductor Devices, 1 (1998) pp.321-324.
  59. High energy implantation studies on pBN grown Semi-insulating Gallium Arsenide single crystals, Semiconductor Devices, Ed. Krishan Lal, Narosa Publishing Ltd., New Delhi (1995) pp.321-323.
  60. Photoluminescence and fabrication of metal-insulator - semiconductor structure on LEC grown InP, Proc. of Seventh Int. workshop on Physics of Semiconductor Devices, Krishan Lal (Ed.), Narosa Publishing House, New Delhi, (1993), pp.450-452.