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未来材料・システム研究所 附属未来エレクトロニクス集積研究センター

BAE Siyoung(べ シヨン), 研究員

BAE Siyoung

学歴

職歴

取得学位

Doctor of engineering, Gwangju Institute of Science and Technology (GIST), Korea, 2013

専門分野

Synthesis and nano-fabrication of compound semiconductors for optoelectronic device applications

学術論文等

SCI(E) JOURNAL PUBLICATIONS

  1. H. J. Lee, S. Y. Bae*, K. Lekhal, T. Mitsunari, A. Tamura, Y. Honda, and H. Amano, “Improved crystal quality of semipolar (10-13) GaN on Si(001) substrates using AlN/GaN superlattice interlayer”, J. Cryst. Growth, 454, 114 (2016). [*Corresponding author]
  2. K. Lekhal*, S. Y. Bae*, H. J. Lee, T. Mitsunari, A. Tamura, M. Deki, Y. Honda, and H. Amano, “Controlled morphology of regular GaN microrod arrays by selective area growth with HVPE”, J. Cryst. Growth, 447, 55 (2016). [*Corresponding author]
  3. B. O. Jung*, S. Y. Bae*, S. Lee, S. Y. Kim, J. Y. Lee, Y. Honda, and H. Amano, “Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode”, Nanoscale Res. Lett. 11, 1 (2016). [*Equal contribution, corresponding author]
  4. J. W. Min, H. Y. Hwang, E. K. Kang, K. W. Park, C. H. Kim, D. S. Lee, Y. D. Cho, S. Y. Bae*, and Y. T. Lee*, “Optical and structural properties of microcrystalline GaN on amorphous substrate prepared by combination of MBE and MOCVD”, Jpn. J. Appl. Phys. 55, 05FB03 (2016). [*Corresponding author]
  5. K. Lekhal*, S. Y. Bae*, H. J. Lee, T. Mitsunari, A. Tamura, Lee, D. S. Lee, M. Deki, Y. Honda, and H. Amano, “Selective area growth of GaN microrods on strain-induced templates by hydride vapor phase epitaxy”, Jpn. J. Appl. Phys. 55, 05FF03 (2016). [*Corresponding author]
  6. S. Y. Bae, B. O. Jung, K. Lekhal, D. S. Lee, M. Deki, Y. Honda, and H. Amano, “Structural and optical study of core-shell InGaN layers of nanorod arrays with multiple stacks of InGaN/GaN superlattices for absorption of longer solar spectrum”, Jpn. J. Appl. Phys. 55, 05FG03 (2016).
  7. S. Y. Bae, B. O. Jung, K. Lekhal, S. Y. Kim, J. Y. Lee, D. S. Lee, M. Deki, Y. Honda, and H. Amano, “Highly elongated vertical GaN nanorod arrays on Si substrates with an AlN seed layer by pulsed-mode metal-organic vapor deposition”, CrystEngComm 18, 1505 (2016). [Back cover featured, Nikkei]
  8. H. J. Lee, K. J. Lee, K. Y. Choi, J. H. Eum, D. K. Lee, D. S. Lee, and S. Y. Bae*, “Solution-based high-density arrays of dielectric microsphere structures for improved crystal quality of III-nitride layers on Si substrates”, J. Nanomaterials 2015, 639750 (2015) [*Corresponding author]
  9. H. J. Lee, J. W. Min, K. J. Lee, K. Y. Choi, J. H. Eum, D. K. Lee, and S. Y. Bae*, “Improved light output power of chemically transferred InGaN/GaN light-emitting diodes for flexible optoelectronic applications”, J. Nanomaterials 2015, 142096 (2015) [*Corresponding author]
  10. J. W. Min*, S. Y. Bae*, W. M. Kang, K. W. Park, E. K. Kang, B. J. Kim, D. S. Lee, and Y. T. Lee, “Evolutionary growth of microscale single crystalline GaN on an amorphous layer by the combination of MBE and MOCVD”, CrystEngComm 17, 5849 (2015). [*Equal contribution]
  11. B. O. Jung, S. Y. Bae, S. Y. Kim, S. Lee, J. Y. Lee, D. S. Lee, Y. Kato, Y. Honda, and H. Amano, “Highly ordered catalyst-freeInGaN/GaN core-shell architecture arrays with expanded active area region”, Nano Energy 11, 294 (2015).
  12. J. H. Min, M. Son, S. Y. Bae, J. Y. Lee, J. Yun, M. J. Maeng, D. G. Kwon, Y. Park, J. I. Shim, M. H. Ham, and D. S. Lee, “Graphene interlayer for current spreading enhancement by engineering of barrier height in GaN-based light-emitting diodes”, Opt. Express 22, A1040 (2014).
  13. B. O. Jung, S. Y. Bae, Y. Kato, M. Imura, D. S. Lee, Y. Honda, and H. Amano, “Morphology development of GaN nanowires using a pulsed-mode MOCVD growth technique”, CrystEngComm 16, 2273 (2014).
  14. S. Y. Bae, Y. H. Song, S. R. Jeon, D. M. Kim, Y. D. Jho, and D. S. Lee, “Pseudomorphic thick InGaN growth with a grading interlayer by metal organic chemical vapor deposition for InGaN/GaN p-i-n solar cells”, J. Cryst. Growth 387, 23(2013).
  15. D. J. Kong, S. Y. Bae, C. M. Kang and D. S. Lee, “InGaN/GaN microcolumn LEDs with sidewall metal contact arrays”, Opt. Express 21, 22320 (2013) .
  16. S. Y. Bae, D. J. Kong, J. Y. Lee, D. J. Seo, and D. S. Lee, “Size-controlled InGaN/GaN nanorod array fabrication and optical characterization”, Opt. Express 21, 016854 (2013).
  17. S. Y. Bae, J. Y. Lee, J. H. Min, and D. S. Lee, “Morphology evolution of pulsed-flux Ga-polar GaN nanorod growth by MOVPE and its nucleation dependence”, Appl. Phys. Express 6, 075501 (2013).
  18. S. B. Choi, S. Y. Bae, D. S. Lee, B. H. Kong, H. K. Cho, J. H. Song, B. J. Ahn, J. F. Kaeding, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical characterization of double peak behavior in {10-11} semipolar light-emitting diodes on miscut m-plane sapphire substrates”, Jpn. J. Appl. Phys. 51, 052101(2012).
  19. S. Y. Bae, D. H. Kim, D. S. Lee, S. J. Lee, and J. H. Baek, “Highly integrated InGaN/GaN semipolar micro-pyramid light-emitting diode arrays by confined selective area growth”, Electrochem. Solid State Lett. 15, H47 (2012).
  20. S. Y. Bae, J. P. Shim, S. R. Jeon, G. Namkoong, and D. S. Lee “Improved photovoltaic effects of a vertical-type InGaN/GaN multiple quantum well solar cell”, Jpn. J. Appl. Phys. 50, 092301(2011).
  21. S. Y. Bae, D. S. Lee, B. H. Kong, H. K. Cho, J. F. Kaeding, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Electroluminescence enhancement of (11-22) semipolar GaN light-emitting diodes grown on miscut m-plane sapphire substrates”, Curr. Appl. Phys. 11, 954(2011).
  22. G. Namkoong, P. Boland, S. Y. Bae, J. P. Shim, D. S. Lee, S. R. Jeon, K. Foe, K. Latimer, and W. A. Doolittle, “Effect of III-nitride polarization on VOC in p-i-n and MQW solar cells”, Phys. Status Solidi-R 5, 86(2011).
  23. Y. M. Song, S. Y. Bae, J. S. Yu, and Y. T. Lee, “Closely packed and aspect-ratio controlled antireflection subwavelength gratings on GaAs using a lens-like shape transfer”, Opt. Lett. 34, 1702 (2009).

PROCEEDINGS

  1. G. Namkoong, G. Diefeng, K. Foe, S. Y. Bae, D. H. Kim, D. J. Seo, D. S. Lee, S. R. Jeon, and H. Baumgart, “Hybrid nitride-ZnO solar cells”, ECS Transactions 41, 185(2011).

研究発表等

International conferences

  1. S. Y. Bae, K. Lekhal, H. J. Lee, J. W. Min, D. S. Lee, M. Deki, Y. Honda, and H. Amano, “Controlled growth of GaN nanorod arrays with an orientation-induced buffer layer” The 16th international meeting on information and displays (IMID) 2016, H72-3 (Jeju, South Korea, 26th Aug. 2016) [Invited oral]
  2. K. Lekhal, S. Y. Bae, H. J. Lee, K. Nishi, K. Saitoh, M. Deki, Y. Honda, and H. Amano, “Controlled morphology of regular GaN microrod and nanowire arrays by selective area growth with HVPE” The 4th international conference on light-emitting devices and their industrial applications (LEDIA) 2016, LED6-3 (Yokohama, Japan, 20th Apr. 2016)
  3. S. Y. Bae, K. Lekhal, B. O. Jung, D. S. Lee, M. Deki, Y. Honda, and H. Amano, “Controlled growth of highly elongated GaN nanorod arrays on AlN/Si templates by pulsed-mode metalorganic vapor deposition” The 4th international conference on light-emitting devices and their industrial applications (LEDIA) 2016, LED6-2 (Yokohama, Japan, 20th Apr. 2016) [Oral]
  4. K. Lekhal, S. Y. Bae, T. Mitsunari, M. Deki, Y. Honda, and H. Amano, “High aspect ratio GaN nanostructures for future devices: from vertical to horizontal growth of nanowires” 14th Akasaki Research Center Symposium, 09:00-09:20 (Nagoya, Japan, 20th Nov. 2015)
  5. S. Y. Bae, B. O. Jung, K. Lekhal, D. S. Lee, M. Imura, M. Deki, Y. Honda, and H. Amano, “Playing with pulsed-mode growth mechanism of GaN nanowire arrays on various templates from preferentially to non-preferentially orientated layer”, 14th Akasaki Research Center Symposium, , 09:20-09:40 (Nagoya, Japan, 20th Nov. 2015) [Oral]
  6. K. Lekhal, S. Y. Bae, H. J. Lee, Z. Sun, M. Deki, Y. Honda, and H. Amano, “Compatibility of hydride vapor phase epitaxy process with synthesis of horizontal and vertical GaN nanowires”, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), We-A46 (Hamamatsu, Japan, 11th Nov. 2015)
  7. S. Y. Bae, B. O. Jung, K. Lekhal, D. S. Lee, M. Deki, Y. Honda, and H. Amano, “Structural and optical study of core-shell InGaN layers of GaN nanorods on Si substrates via pulsed-mode MOCVD”, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), Tu-A56 (Hamamatsu, Japan, 10th Nov. 2015)
  8. J. W. Min, S. Y. Bae, E. K. Kang, K. W. Park, C. H. Kim, S. J. Kang, D. S. Lee, and Y. T. Lee, “ Optical properties of microscale single crystalline GaN on amorphous layer by combined epitaxial technique of MBE and MOCVD”, The 6th International Symposium on Growth of III-Nitrides (ISGN-6), Tu-A25 (Hamamatsu, Japan, 10th Nov. 2015)
  9. S. Y. Bae, J. W. Min, B. O. Jung, K. Lekhal, D. S. Lee, Y. T. Lee, Y. Honda, and H. Amano, “Selective GaN growth on amorphous layer by combined epitaxy with MBE and MOCVD”, The 11th International Conference On Nitride Semiconductors(ICNS-II), (Beijing, China, 1st Sep. 2015)
  10. S. Y. Bae, B. O. Jung, K. Lekhal, D. S. Lee, Y. Honda, and H. Amano, “Selective Area Growth of GaN Nanorods on Si (111) Grown by Pulsed-Mode MOCVD”, European Materials Research Society (E-MRS) Spring Meeting 2015, (Lille, France, 12th May 2015) [Oral]
  11. S. Y. Bae, B. O. Jung, H. J. Lee, K. Lekhal, D. S. Lee, Y. Honda, and H. Amano, “Growth of Highly Ordered GaN Nanorod Light-Emitting Didoes on Si-Based AlN Template for Epitaxial Transfer”, The 3rd international conference on light-emitting devices and their industrial applications (LEDIA) 2015, LEDp2-39 (Yokohama, Japan, 23th Apr. 2015)
  12. K. Lekhal, T. Mitsunari, R. Kizu, S. Y. Bae, Y. Honda, and H. Amano, “HVPE and VLS-HVPE Synthesis of GaN Nanowires”, The 3rd international conference on light-emitting devices and their industrial applications (LEDIA) 2015, LEDp2-38 (Yokohama, Japan, 23th Apr. 2015)
  13. B. O. Jung, S. Y. Bae, S. Y. Kim, D. S. Lee, Y. Honda, and H. Amano, “Selective area grown GaN nanowire based InGaN/GaN MQWs coaxial array : structural characterization and luminescent properties”, Materials Research Society (MRS) Fall Meetings and Exhibits 2014, LL5.22 (Boston, USA, 1st Dec. 2014)
  14. S. Y. Bae, J. Y. Lee, B. O. Jung, J. H. Min, D. S. Lee, Y. Kato, M. Imura, Y. Honda, and H. Amano, “Morphology Control of GaN-based Nano-LEDs Grown by Pulsed-mode MOCVD Epitaxy and Its Material/Optical Characterization”, The international conference on electronic materials and nanotechnology for green environment (ENGE) 2014, S10-1542, (Jeju, Korea, 17th Nov. 2014) [Invited oral]
  15. J. W. Min, E. K. Kang, S. Y. Bae, K. W. Park, S. J. Kang, C. H. Kim, and Y. T. Lee, “Effect of buffer layers on the growth of self-catalyst GaN nanowire arrays by PA-MBE on Si (111) substrate”, The 12th International Conference on Nano Science and Nano Technology (ICNST) 2014, P1-21 (Mokpo, South Korea, 6th Nov. 2014).
  16. B. O. Jung , S. Y. Bae , D. S. Lee, Y. Honda, and H. Amano, “Study of Ga-Polar GaN Nanowire Arrays Formation Mechanism Using Pulsed-Mode MOVPE Growth Technique”, The 5th International Symposium on Growth of III-Nitrides (ISGN), J15, (Atlanta, USA, 20th May 2014).
  17. D. J. Kong, S. Y. Bae, C. M. Kang, and D. S. Lee, “InGaN/GaN Microcolumn LEDs with Sidewall Metal contact Arrays”, The 10th International Conference on Nitride Semiconductors (ICNS) 2013, BP3.14, (Washington, DC, 25th Aug., 2013).
  18. S. Y. Bae, D. J. Kong, and D. S. Lee, “Performance comparison of InxGa1-xN/GaN multiple quantum well solar cells with different indium composition”, The 16th International Conference on Metal Organic Vapor Phase Epitaxy (IC-MOVPE) 2012, WeP-19 (Busan, South Korea, 23th May 2012).
  19. D. H. Kim, S. Y. Bae, K. S. Kim, Y. J. Kim, G. C. Yi, and D. S. Lee, “Growth of GaN pyramids and GaN/ZnO rods using SiO2 mask with sub-micron hole patterns”, The 15th International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2011, T-P-22, (Jeju, South Korea, 8th July 2011).
  20. D. J. Seo, S. Y. Bae, J. P. Shim, and D. S. Lee, “Heterojunctional n-ZnO/p-GaN Solar Cells using SiO2 mask having sub-micron hole patterns”, The 15th International Symposium on the Physics of Semiconductors and Applications (ISPSA) 2011, F-P-13 (Jeju, South Korea, 8th July 2011).
  21. S. Y. Bae, D. H. Kim, D. J. Seo, D. S. Lee, S. J. Lee, and J. H. Baek, “Optical and material properties of InGaN/GaN multiple quantum well in micropyramid structure using selective area growth”, Asia-Pacific Workshop on Widegap Semiconductors (APWS) 2011, p327 (Toba, Japan, 25th May, 2011).
  22. S. Y. Bae, J. P. Shim, D. J. Seo, S. R. Jeon, and D. S. Lee, “Vertical-type InGaN/GaN MQW Solar Cells with Sunlight Concentrator”, The 12th International Symposium on Eco-materials Processing and Design (ISEPD2011), P-A60 (Chiang Mai, Thailand, 9th Jan. 2011).
  23. S. Y. Bae, J. P. Shim, S. R. Jeon, Y. K. Jeong, and D. S. Lee, “Electrical and optical properties of InGaN-based p-i-n solar cells under concentrated sunlight”, International Workshop on Nitride Semiconductors (IWN) 2010, p. 259 (Tampa, USA, 20th Sep. 2010). [Oral]
  24. J. P. Shim, S. Y. Bae, S. R. Jeon, and D. S. Lee, “Efficiency improvement by vertical type InGaN/GaN MQW solar cells”, International Workshop on Nitride Semiconductors (IWN) 2010, p. 257 (Tampa, USA, 20th Sep. 2010).
  25. S. Y. Bae, S. B. Choi, D. S. Lee, J. F. Kaeding, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optical and morphological properties of semipolar GaN light-emitting diodes on miscut m-plane sapphire substrates”, The 8th International Symposium on Semiconductor Light Emitting Devices (ISSLED) 2010, P32 (Beijing, China, 17th May 2010).
  26. S. Y. Bae, J. P. Shim, D. S. Lee, J. F. Kaeding, S. Nakamura, S. P. DenBaars, J. S. Speck, “Electroluminescent emission properties of the (11-22) semipolar GaN on miscut m-plane sapphire substrates”, The 8th International Conference on Nitride Semiconductor (ICNS) 2009, ThP104 (Jeju, South Korea, 18th Oct. 2009).
  27. S. Y. Bae, D. S. Lee, J. F. Kaeding, S. Nakamura, S. P. DenBaars, and J. S. Speck, “Optimization of the miscut angle on the m-plane sapphire for the growth of (11-22) semipolar GaN films using metal organic vapor phase epitaxy”, The 36th International Symposium on Compound Semiconductors (ISCS) 2009, P. 233 (Santa Barbara, USA, 31th Aug. 2009). [Oral]
  28. Y. M. Song, S. Y. Bae, J. S. Yu, and Y. T. Lee, “Fabrication of antireflection nanostructures on GaAs by holographic lithography for device applications”, Conference on Lasers and Electro-Optics/Conference on Quantum Electronics and Laser Science Conference, CLEO/QELS 2009, CMQQ5 (Boltmore, USA, 1st Jun. 2009).
  29. S. Y. Bae, Y. M. Song, Y. T. Lee, “Nanolens array fabricated by laser holographic lithography and thermal reflow method”, The 1st International Conference on Microelectronics and Plasma Technology (ICMAP-01), PS-74 (Jeju, South Korea, 19th Aug. 2008).

Lectures and seminars

  1. S. Y. Bae “Demonstration of highly integrated micro/nano LEDs and its structural/optical characterization”, LG Innotek seminar, LG R&D Umyeon-dong campus (Seoul, Korea, 3rd September 2013)
  2. S. Y. Bae “Blue Light-Emitting Diodes (LEDs) for the Future Lighting”, Japan Society for the Promotion of Science (JSPS)’s Science Dialogue, Yamanashi Prefectural Tsuru High School (Yamanashi, Japan, 23th January 2015).
  3. S. Y. Bae “Introduction to GaN Blue Light-Emitting Diodes (LEDs)”, World Hope Asia & Africa Foundation (WHAF) Science Lecture, Nagoya university, (Ngoya, Japan, 2nd December 2015).

所属学会等

受賞学術賞等

  1. Young researcher’s paper award
    The 4th international conference on light-emitting devices and their industrial applications (LEDIA) (2016)
  2. Best young scientist award
    The 6th International Symposium on Growth of III-Nitrides (ISGN-6) (2015)
  3. JSPS postdoctoral fellowship
    The Japan Society for the Promotion of Science (JSPS), Japan
    (2014–Present)
  4. Best poster award
    12th International Conference on Nano Science and Nano Technology (2014)
  5. Participation award
    SAMSUNG Fine Chemicals Campus Patent Strategy Universiade (2012)
    Title: Materials of transparent electrodes for solution-phase fabrication
  6. Grand poster prize
    The 2nd conference of Korea Society of Optoelectronics, Korea
    (2012)
  7. Research award
    DASAN project of SIC in GIST, Korea (2012)
  8. Participation award
    SAMSUNG Corning Campus Patent Strategy Universiade (2011)
    Title: Lift-off technology of GaN substrate