教員詳細

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未来材料・システム研究所 附属未来エレクトロニクス集積研究センター

成田 哲生 (ナリタ テツオ), 客員准教授, 1980年生

NARITA, Tetsuo

(株式会社 豊田中央研究所 研究員)

E-Mailアドレス

narita*@*imass.nagoya-u.ac.jp(メール送信の際は@前後の*を削除してください)

学歴

職歴

取得学位

研究分野を表すキーワード

窒化物半導体, パワーデバイス

専門分野

科学研究費補助金

競争的資金等(科研費以外)

学術論文等

  1. “Cathodoluminescence Study on Thermal Recovery Process of Mg-Ion Implanted N-Polar GaN” K. Kataoka, T. Narita, H. Iguchi, T. Uesugi, and T. Kachi, Phys. Status Solidi B, Published Online (2017).
  2. “Hole-Trapping Process at Al2O3/GaN Interface Formed by Atomic Layer Deposition”, A. Teramoto, M. Saito, T. Suwa, T. Narita, R. Kuroda, S. Sugawa, IEEE Electron Dev. Lett. 38, 1309 (2017).
  3. “TaC-coated graphite prepared via a wet ceramic process: Application to CVD susceptors for epitaxial growth of wide-bandgap semiconductors”, D. Nakamura, T. Kimura, T. Narita, A. Suzumura, T. Kimoto, K. Nakashima, J. Cryst. Growth 478, 163 (2017).
  4. “P-type doping of GaN(000-1) by magnesium ion implantation”, T. Narita, K. Kataoka, T. Uesugi, and T. Kachi, Appl. Phys. Express 10, 016501 (2017).
  5. “Band offset of Al(1-x)Si(x)Oy mixed oxide on GaN evaluated by hard X-ray photoelectron spectroscopy”, K. Ito, D. Kikuta, T. Narita, K. Kataoka, N. Isomura, K. Kitazumi, and T. Mori, Jpn. J. Appl. Phys. 56, 04CG07 (2017).
  6. “Al2O3/SiO2 nanolaminate for a gate oxide in a GaN-based MOS device”, D. Kikuta, K. Ito, T. Narita, and T. Mori J. Vac. Sci. Technol. A 35, 01B122 (2017).
  7. “Strain-induced step bunching in orientation-controlled GaN on Si”, T. Narita, H. Iguchi, K. Horibuchi, N. Otake, S. Hoshi, and K. Tomita, Jpn .J. Appl. Phys. 55, 05FB01 (2016).
  8. “Positron annihilation and cathodoluminescence study on inductively coupled plasma etched GaN”, K. Kataoka, M. Kanechika, T. Narita, Y. Kimoto, and A. Uedono, Phys. Status Solidi B 252, 913 (2015).
  9. “Reliability Evaluation of Al2O3 Deposited by Ozone-Based Atomic Layer Deposition on Dry-Etched n-Type GaN”, D. Kikuta, T. Narita, K. Kutsuki, T. Uesugi, and T. Kachi, Jpn .J. Appl. Phys. 52, 08JN19 (2013).
  10. “Characterization of Ar ion etching induced damage for GaN”, K. Kataoka, Y. Kimoto, K. Horibuchi, T. Nonaka, N. Takahashi, T. Narita, M. Kanechika, and K. Dohmae, SURFACE AND INTERFACE ANALYSIS 44, 709 (2012).
  11. “Interface Properties of Al2O3/n-GaN Structures with Inductively Coupled Plasma Etching of GaN Surfaces”, S. Kim, Y. Hori, W-C. Ma, D. Kikuta, T. Narita, H. Iguchi, T. Uesugi, T. Kachi, and T. Hashizume, Jpn. J. Appl. Phys. 51, 060201 (2012).
  12. “Reduction of peak electric field strength in GaN-HEMT with carbon doping layer“, T. Narita, D. Kikuta, H. Iguchi, K. Ito, K. Tomita, T. Uesugi, and T. Kachi, Phys. Status Solidi C9, 915 (2012).
  13. “Study on post-etching processes for p-type GaN using HAX-PES“, D. Kikuta, T.Narita, , N. Takahashi, K. Kataoka, Y. Kimoto, K. Tomita, T. Uesugi, and T. Kachi, Phys. Status Solidi C9, 927 (2012).
  14. “Study of etching-induced damage in GaN by hard X-ray photoelectron spectroscopy “, T. Narita, D. Kikuta, N. Takahashi, K. Kataoka, Y. Kimoto, K. Tomita, T. Uesugi, T. Kachi, and M. Sugimoto, Phys. Status Solidi A208, 1541 (2011).
  15. “Estimation of internal quantum efficiency in InGaN-based light emitting diodes using electroluminescence decay times”, S. Saito, T. Narita, K. Zaima, K. Tachibana, H. Nago, G. Hatakoshi, and S. Nunoue, Phys. Status Solidi C5, 2195 (2008).
  16. “The surface diffusion of Ga species on an AlGaN facet structure in low pressure MOVPE”, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki, Phys. Status Solidi C4, 2506 (2007).
  17. “The surface diffusion of Ga on an AlGaN/GaN stripe structure in the selective MOVPE”, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki, Phys. Status Solidi B243, 1665 (2006).
  18. “Optical and electrical properties of (1-101)GaN grown on a 7 degrees off-axis (001)Si substrate”, T. Hikosaka, T. Narita, Y. Honda, M. Yamaguchi, and N. Sawaki, Appl. Phys. Lett. 84, 4717 (2004).
  19. “The surface diffusion of Ga on an AlGaN/GaN facet structure in the MOVPE growth”, T. Narita, T. Hikosaka, Y. Honda, M. Yamaguchi, and N. Sawaki, Phys. Status Solidi C0, 2154 (2004).

研究発表等

  1. GaN研究コンソーシアム第1回シンポジウム,成田 哲生, 名古屋大学, 2017年10月18日
  2. Energy Material Nanotechnology (EMN) Meeting on Epitaxy 2017, “MOVPE Growth Technology for GaN Based Power Devices”, T. Narita, K. Tomita, Y. Tokuda, and T. Kachi, Spain, Sept. 13, 2017, Invited talk
  3. 2017 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD2017), “Ion Implantation Technique for Controlling Conduction Type of GaN”, T. Narita, K. Kataoka, M. Kanechika, T. Uesugi, and T. Kachi, South Korea, July 4, 2017, Invited talk
  4. The 17th International Workshop on Junction Technology, “Ion Implantation Technique for Conductivity Control of GaN”, T. Narita, K. Kataoka, M. Kanechika, T. Uesugi, and T. Kachi, Kyoto Univ., June 2, 2017, Invited talk
  5. 応用物理学会 先進パワー半導体分科会第6回研究会, “GaN へのイオン注入と伝導制御”, 成田哲生, 片岡恵太, 上杉勉, 加地徹, 京都, 2016年12月15日, 招待講演
  6. The 6th International Symposium on Growth of III-Nitrides (ISGN-6), “Orientation-Controlled GaN on Silicon and Strain-Induced Step Bunching”, T. Narita, H. Iguchi, N. Otake, S. Hoshi, and K. Tomita, Hamamatsu, Nov. 10, 2015
  7. 2015 E-MRS Fall Meeting, “GaN Power Devices for Vehicles”, T. Narita and T. Kachi, Poland, Sept.17, 2015, Invited talk
  8. 10th International Conference on Nitride Semiconductors (ICNS-10), “The Effect of Residual Impurities in the Epitaxial Layer on Fe-Doped GaN”, T. Narita, H. Iguchi, T. Uesugi, T. Kachi, and T. Hashizume, USA, Aug. 28, 2013
  9. International Symposium on EcoTopia Science (ISETS'11), “Analyses of Surface Band Bending in GaN Using Hard X-ray Photoelectron Spectroscopy”, T. Narita, D. Kikuta, N. Takahashi, K. Kataoka, Y. Kimoto, K. Tomita, T. Uesugi, and T. Kachi, Nagoya Univ., Dec. 10, 2011
  10. マイクロビームアナリシス第141委員会 第145回研究会, “HAX-PESを用いたGaNのバンド曲がり評価”, 成田哲生, 菊田大悟, 高橋直子, 片岡恵太, 木本康司, 冨田一義, 上杉勉, 加地徹, 名古屋, 2011年9月13日
  11. 9th International Conference on Nitride Semiconductors (ICNS-9), “Reduction of Peak Electric Field Strength in GaN-HEMT with Carbon Doped Layer”, T. Narita, D. Kikuta, H. Iguchi, K. Ito, K. Tomita, T. Uesugi, and T. Kachi, UK, July 13, 2011
  12. International Workshop on Nitride Semiconductors (IWN2010), “Study on Etching-Induced Damage of GaN by Hard X-Ray Photoelectron Spectroscopy”, T. Narita, D. Kikuta, N. Takahashi, K. Kataoka, Y. Kimoto, K. Tomita, T. Uesugi, T. Kachi, and M. Sugimoto, Sept. 23, 2010

知的財産等

  1. 特許06007927, 半導体装置, 成田哲生 他, 日本
  2. 特許05997258 オフ角を備えているシリコン単結晶とIII族窒化物単結晶の積層基板と、その製造方法, 成田哲生 他, 日本
  3. 特許05801560 半導体装置, 成田哲生 他, 日本
  4. 特許05687520 p型のIII族窒化物半導体層を含む半導体装置, 成田哲生 他, 日本
  5. 特許05431756 III族窒化物半導体からなる半導体装置, 成田哲生 他, 日本
  6. 特許05271022 半導体装置, 成田哲生 他, 日本
  7. 特許05204794 半導体装置とその製造方法, 成田哲生 他, 日本

受賞学術賞等

所属学会等

委員会活動