Our laboratory covers the research area from materials science to application of nitride semiconductors. To function as a bridge between research and industry, we purposely examine basic research, and expedite connecting research results to practical use.

This collaborative research laboratory was established in Nagoya Univ. and NIMS and is managed by Prof. Hiroshi Amano and Dr. Yasuo Koide, NIMS Director/former Executive Vice President, as a mutual cross-appointment. It facilitates crystallographic, electrical, and optical property characterization and the development of new measurement techniques for developing GaN-based power devices. The research will be effectively promoted by using advanced measurement and analysis equipment and techniques in NIMS.

Toward the realization of gallium nitride power semiconductor devices, this division researches and develops following new techniques:
1. Processing techniques that will enable the controllability of defects, impurities and damages with high accuracy
2. Device design technology for low-loss and high-switching devices
3. System applications using new gallium nitride power devices with high-performance

DENSO Automotive Power Electronics Industry‒Academia Collaborative Chair is looking into the future of high-power, high-frequency, and high-efficiency electric drive systems for HVs, EVs, and FCVs, and promoting exploratory research into next-generation power semiconductor materials, devices, and application systems

In 1986, Toyoda Gosei Co., Ltd., started a joint research project with Professor Akasaki, Professor Amano, and Toyota Central R&D Labs., Inc., and began fundamental research on GaN materials. The commercialization of LEDs and their subsequent widespread adoption were based on this research. The core competencies cultivated from research, commercialization, expansion, and continuation will be utilized to create new business opportunities.

AsahiKASEI Innovative Devices IA Collaborative Chair exploit our high-quality AlN single-crystal substrate technology, exploratory research into novel devices, and applications to create new business opportunities.

In order to realize GaN power devices, we research the following:

1. ①epitaxial growth with precise control of impurities and point defects
2. ②gate insulators and MOS interfaces
3. ③process technologies, such as low-damage etching and ion implantation
4. ④device design for very low loss

MITSUBISHI CHEMICAL GaN Substrate Devices Industry-Academia Collaborative Chair is engaged in the research and development of high-quality gallium nitride (GaN) substrates that serve as the foundation of new device structures exploiting the excellent properties of GaN, focusing on the following themes.

1. ・Investigation of the correlation between substrate quality (e.g., crystal defects, impurities)
   and device characteristics, as well as elucidation of the mechanism underlying the correlation
2. ・Clarification of the quality and characteristics required for GaN substrates for new devices

Rohm Multi-Scale Power System Simulation Industry-Academia Collaborative Chair is realizing system-optimized device design with integrated simulation technology and without any prototypes.

Toward the realization of novel nanocarbon devices, the basic and elemental technologies for fully use of the unique features of nano-carbons will be developed.